NGTB40N60L2WG

Mfr. #:: NGTB40N60L2WG
제조사:: ON Semiconductor
설명:: IGBT Transistors 600V/40A FAST IGBT FSII T
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NGTB40N60L2WG 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NGTB40N60L2WG Datasheet NGTB40N60L2WG Datasheet (P4-P6)NGTB40N60L2WG Datasheet (P7-P8)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 2 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 80 A

Pd - 전력 손실:: 417 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

포장:: 튜브

연속 수집가 현재 IC 최대:: 80 A

상표:: 온세미컨덕터

게이트-이미터 누설 전류:: 200 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 30

하위 카테고리:: IGBT

단위 무게:: 1.340411 oz

Tags: NGTB40N60, NGTB40N6, NGTB40, NGTB4, NGTB, NGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB40N60L2WG 설명

***ical: Trans IGBT Chip N-CH 600V 80A 417000mW 3-Pin(3+Tab) TO-247 Tube

***(Formerly Allied Electronics): NGTB40N60L2WG; IGBT Transistor; 80 A 600 V; 1MHz; 3-Pin TO-247

***nell: 600V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 417W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ical: Trans IGBT Chip N=-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: FGH40N60SMDF Series 600 V 80 A 92 ns Flange Mount Field Stop IGBT - TO-247

***el Electronic: FAIRCHILD SEMICONDUCTOR FGH40N60SMDF IGBT Single Transistor, General Purpose, 80 A, 600 V, 349 W, 600 V, TO-247AB, 3 Pins

***nell: IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:349W

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***ical: Trans IGBT Chip N-CH 600V 90A 300000mW 3-Pin(3+Tab) TO-247 Tube

*** Electronics: ON SEMICONDUCTOR NGTB45N60S1WG IGBT Single Transistor, 90 A, 2 V, 300 W, 600 V, TO-247, 3 Pins

***nell: IGBT, SINGLE, 600V, 90A, TO-247-3; DC Collector Current: 90A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

***ow.cn: Trans IGBT Chip N-CH 600V 120A 375000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-2

*** Electronic Components: IGBT Transistors 600V 60A High Speed Trench Gate IGBT

***ark: Igbt, Single, 600V, 80A, To-247-3 Rohs Compliant: Yes

***r Electronics: Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel

***(Formerly Allied Electronics): IGBT Trench gate,600V 60A/100 deg,TO247

***nell: IGBT, SINGLE, 600V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pi

***et: STMICROELECTRONICS STGW60V60DF

***icroelectronics: 45 A, 600 V ultrafast IGBT with low drop diode

***ure Electronics: STGWA45HF60WDI Series 600 V 50 A Flange Mount Ultra Fast IGBT - TO-247

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247

*** Electronic Components: IGBT Transistors 45A 600V Ultra Fast IGBT

***ical: Trans IGBT Chip N-CH 600V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube

***(Formerly Allied Electronics): NGTB35N60FL2WG; IGBT Transistor; 70 A 600 V; 1MHz; 3-Pin TO-247

***nell: 600V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins;

***p One Stop Global: Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3

***ark: IGBT, TO-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:250W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
NGTB40N60L2WG DISTI # V99:2348_07277717	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	20	1:$0.4590
NGTB40N60L2WG DISTI # NGTB40N60L2WGOS-ND	ON Semiconductor	IGBT 600V 80A 417W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	85In Stock	2520:$3.1780 510:$3.9566 120:$4.6478 30:$5.3630 10:$5.6730 1:$6.3200
NGTB40N60L2WG DISTI # 25862572	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	20	3:$3.2938
NGTB40N60L2WG DISTI # NGTB40N60L2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube - Bulk (Alt: NGTB40N60L2WG) Min Qty: 100 Container: Bulk	Americas - 0	500:$3.0900 1000:$3.0900 100:$3.1900 200:$3.1900 300:$3.1900
NGTB40N60L2WG DISTI # NGTB40N60L2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB40N60L2WG) RoHS: Compliant Min Qty: 150 Container: Tube	Americas - 0	1500:$2.8025 750:$2.8734 450:$2.9103 300:$2.9480 150:$2.9673
NGTB40N60L2WG DISTI # 86X0863	ON Semiconductor	600V/40A FAST IGBT FSII T / TUBE	0	500:$2.9600 250:$3.0500 100:$3.6400 50:$4.2000 25:$4.4800 10:$5.1100 1:$5.9100
NGTB40N60L2WG DISTI # 70600203	ON Semiconductor	NGTB40N60L2WG,IGBT Transistor,80 A 600 V,1MHz,3-Pin TO-247 RoHS: Compliant	0	2:$4.2800 10:$4.0700 20:$3.8700 50:$3.6800 100:$3.5000
NGTB40N60L2WG DISTI # 863-NGTB40N60L2WG	ON Semiconductor	IGBT Transistors 600V/40A FAST IGBT FSII T RoHS: Compliant	111	1:$6.0000 10:$5.1000 100:$4.4200 250:$4.2000 500:$3.7600 1000:$3.1700 2500:$3.0200
NGTB40N60L2WG	ON Semiconductor	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	1650	1000:$3.3200 500:$3.4900 100:$3.6300 25:$3.7900 1:$4.0800
NGTB40N60L2WG DISTI # 8427901P	ON Semiconductor	IGBT FIELD STOP II 600V 40A DIODE TO247, TU	32	100:£3.2500 50:£3.5000 20:£3.6600 10:£3.7350
NGTB40N60L2WG DISTI # 2452039	ON Semiconductor	600V/40A FAST IGBT FSII T RoHS: Compliant	8	2500:$4.6500 1000:$4.8800 500:$5.7900 250:$6.4600 100:$6.8000 10:$7.8500 1:$9.2300
NGTB40N60L2WG DISTI # 2452039	ON Semiconductor	600V/40A FAST IGBT FSII T RoHS: Compliant	8	500:£3.0100 250:£3.2000 100:£3.3800 10:£3.9000 1:£5.0700

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NGTB40N60L2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes