CMPA601C025F

Mfr. #:: CMPA601C025F
제조사:: N/A
설명:: RF Amplifier GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CMPA601C025F 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: CMPA601C025F 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF 증폭기

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: QFN-32

유형:: 파워 앰프

기술:: GaN SiC

동작 주파수:: 2.5 GHz

P1dB - 압축점:: 33 dBm

얻다:: 19 dB

작동 공급 전압:: 32 V

NF - 노이즈 피겨:: -

작동 공급 전류:: 360 mA

포장:: 와플

주파수 범위:: 0.03 GHz to 2.5 GHz

제품:: GaN

상표:: 코르보

채널 수:: 1 Channel

개발 키트:: TGA2237-SM Eval Board

입력 반환 손실:: 10 dB

습기에 민감한:: 네

Pd - 전력 손실:: 19 W

상품 유형:: RF 증폭기

공장 팩 수량:: 25

하위 카테고리:: 무선 및 RF 집적 회로

공급 전압 - 최소:: 20 V

부품 번호 별칭:: 1115388

단위 무게:: 0.006653 oz

Tags: CMPA6, CMPA, CMP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CMPA601C025F 설명

***ical: RF Amp Module Single Power Amp 12GHz 28V 11-Pin Case 440213

***fspeed: 25-W; 6.0 - 12.0-GHz; GaN MMIC; Power Amplifier

***fspeed SCT: Aerospace & Defense, 28 V, 12 GHz, 25W, Flange, RoHS

CMPA601C025F 추가 정보

GaN HEMT based MMICs: Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

부분 #	제조	설명	재고	가격
CMPA601C025F-TB DISTI # CMPA601C025F-TB-ND	Wolfspeed	EVAL BOARD FOR CMPA601C025F RoHS: Compliant Min Qty: 2 Container: Bulk	Temporarily Out of Stock	2:$715.0000
CMPA601C025F DISTI # 941-CMPA601C025F	Cree, Inc.	RF Amplifier GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt RoHS: Compliant	99	1:$848.5000
CMPA601C025F-TB DISTI # 941-CMPA601C025F-TB	Cree, Inc.	RF Amplifier Test Board without GaN MMIC RoHS: Compliant	1	1:$715.0000
CMPA601C025F DISTI # CMPA601C025F	Wolfspeed	RF & MW POWER AMPLIFIER RoHS: Compliant	0	50:$848.5000
CMPA601C025F-TB DISTI # CMPA601C025F-TB	Wolfspeed	RF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT RoHS: Compliant	2	2:$715.0000

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