SI8409DB-T1-E1

Name: Vishay - SI8409DB-T1-E1
Brand: Vishay
SKU: OMO-3379421
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8409DB-T1-E1
제조사:: Vishay
설명:: MOSFET P-CH 30V 4.6A 2X2 4-MFP
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI8409DB-T1-E1 데이터 시트
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ECAD Model:
추가 정보:: SI8409DB-T1-E1 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: IC 칩

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI8409DB-E1

장착 스타일: SMD/SMT

상표명: TrenchFET/마이크로 풋

패키지 케이스: 4-XFBGA, CSPBGA

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 4-Microfoot

구성: 단일 이중 드레인

FET형: MOSFET P-채널, 금속 산화물

파워맥스: 1.47W

트랜지스터형: 1 P-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: -

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 4.6A (Ta)

Rds-On-Max-Id-Vgs: 46 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 1.4V @ 250μA

Gate-Charge-Qg-Vgs: 26nC @ 4.5V

Pd 전력 손실: 1.47 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 35 ns

상승 시간: 35 ns

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: - 3.6 A

Vds-드레인-소스-고장-전압: - 30 V

Rds-On-Drain-Source-Resistance: 1.052 Ohms

트랜지스터 극성: P-채널

일반 꺼짐 지연 시간: 140 ns

일반 켜기 지연 시간: 20 ns

Qg-Gate-Charge: 17 nC

순방향 트랜스컨덕턴스-최소: 6.4 S

채널 모드: 상승

Tags: SI840, SI84, SI8

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8409DB-T1-E1 설명

***ure Electronics: Single P-Channel 30 V 46 mO 17 nC Surface Mount Power Mosfet - MICRO FOOT

***ical: Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R

*** Source Electronics: MOSFET P-CH 30V 4.6A 2X2 4-MFP

***i-Key: MOSFET P-CH 30V 4.6A 4MICROFOOT

***ark: P Ch Mosfet, -30V, 6.3A, Micro Foot; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:12V Rohs Compliant: No

SI8409DB-T1-E1 추가 정보

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Market price

부분 #	제조	설명	재고	가격
SI8409DB-T1-E1 DISTI # V72:2272_09216553	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	4407	3000:$0.4274 1000:$0.4304 500:$0.5504 250:$0.6208 100:$0.6226 25:$0.7627 10:$0.7658 1:$0.8855
SI8409DB-T1-E1 DISTI # V36:1790_09216553	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.4304
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1CT-ND	Vishay Siliconix	MOSFET P-CH 30V 4.6A 2X2 4-MFP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13394In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 4.6A 2X2 4-MFP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13394In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1TR-ND	Vishay Siliconix	MOSFET P-CH 30V 4.6A 2X2 4-MFP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	12000In Stock	3000:$0.4928
SI8409DB-T1-E1 DISTI # 27003823	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	4407	3000:$0.4274 1000:$0.4304 500:$0.5504 250:$0.6208 100:$0.6226 25:$0.7627 16:$0.7658
SI8409DB-T1-E1 DISTI # 29546570	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.4867
SI8409DB-T1-E1 DISTI # 30743480	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.4304
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.6A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8409DB-T1-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4649 6000:$0.4509 12000:$0.4329 18000:$0.4209 30000:$0.4099
SI8409DB-T1-E1 DISTI # 18X0030	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -4.6A, MICRO FOOT-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:-4.5V,Power Dissipation Pd:1.47W, RoHS Compliant: Yes	0	1:$1.1200 10:$0.9220 25:$0.8510 50:$0.7790 100:$0.7080 500:$0.6090 1000:$0.4800
SI8409DB-T1-E1 DISTI # 51K7013	Vishay Intertechnologies	P CH MOSFET, -30V, 6.3A, MICRO FOOT,Transistor Polarity:P Channel,Continuous Drain Current Id:-6.3A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):65mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V , RoHS Compliant: Yes	0	1:$0.4480 3000:$0.4480
SI8409DB-T1-E1. DISTI # 30AC0210	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.4480 3000:$0.4480
SI8409DB-T1-E1	Vishay Intertechnologies	Single P-Channel 30 V 46 mO 17 nC Surface Mount Power Mosfet - MICRO FOOT RoHS: Compliant	6000Reel	3000:$0.4050
SI8409DB-T1-E1 DISTI # 781-SI8409DB-E1	Vishay Intertechnologies	MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 RoHS: Compliant	4620	1:$1.1200 10:$0.9220 100:$0.7080 500:$0.6090 1000:$0.4800 3000:$0.4480
SI8409DB-T1-E1	Vishay Semiconductors	4600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	2340	2052:$0.3750 445:$0.3900 1:$1.5000
SI8409DB-T1-E1	Vishay Siliconix		2925	5:$1.1250 19:$0.7313 70:$0.4219 239:$0.3600 515:$0.3150 1224:$0.2925
SI8409DB-T1-E1 DISTI # XSFP00000107897	Vishay Siliconix	RoHS: Compliant	4038	3000:$0.8100 4038:$0.7364
SI8409DB-T1-E1 DISTI # C1S803601003786	Vishay Intertechnologies	MOSFETs RoHS: Compliant	4407	250:$0.6193 100:$0.6210 25:$0.7598 10:$0.7629
SI8409DB-T1-E1 DISTI # C1S803601906641	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	3000:$0.4299
SI8409DB-T1-E1	Vishay Intertechnologies	MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 RoHS: Compliant	Americas - 6000

SI8409DB-T1-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes