IPN70R2K1CEATMA1

IPN70R2K1CEATMA1
Mfr. #:
IPN70R2K1CEATMA1
제조사:
Infineon Technologies
설명:
MOSFET CONSUMER
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPN70R2K1CEATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPN70R2K1CEATMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
SOT-223-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
700 V
Id - 연속 드레인 전류:
4 A
Rds On - 드레인 소스 저항:
1.89 Ohms
Vgs th - 게이트 소스 임계 전압:
2.5 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
7.8 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
5 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
시리즈:
쿨모스 CE
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
27 ns
습기에 민감한:
상품 유형:
MOSFET
상승 시간:
9 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
25 ns
일반적인 켜기 지연 시간:
6.4 ns
부품 번호 별칭:
IPN70R2K1CE SP001664860
단위 무게:
0.009171 oz
Tags
IPN70R2, IPN70, IPN7, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
MOSFET 700VCoolMOS CE Power Transistor
***et Europe
650V and 700V CoolMOS N-Channel Power MOSFET
***i-Key
MOSFET N-CHANNEL 750V 4A SOT223
***ineon
CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
부분 # 제조 설명 재고 가격
IPN70R2K1CEATMA1
DISTI # V36:1790_17072471
Infineon Technologies AGMOSFET 700VCoolMOS CE Power Transistor0
  • 3000000:$0.1691
  • 1500000:$0.1693
  • 300000:$0.1886
  • 30000:$0.2216
  • 3000:$0.2270
IPN70R2K1CEATMA1
DISTI # IPN70R2K1CEATMA1-ND
Infineon Technologies AGMOSFET N-CHANNEL 750V 4A SOT223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.2270
IPN70R2K1CEATMA1
DISTI # IPN70R2K1CEATMA1
Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET - Tape and Reel (Alt: IPN70R2K1CEATMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1769
  • 18000:$0.1799
  • 12000:$0.1859
  • 6000:$0.1929
  • 3000:$0.2009
IPN70R2K1CEATMA1
DISTI # SP001664860
Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET (Alt: SP001664860)
RoHS: Compliant
Min Qty: 3000
Europe - 0
  • 30000:€0.1659
  • 18000:€0.1779
  • 12000:€0.1929
  • 6000:€0.2109
  • 3000:€0.2579
IPN70R2K1CEATMA1
DISTI # 726-IPN70R2K1CEATMA1
Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant
0
  • 1:$0.6000
  • 10:$0.5040
  • 100:$0.3070
  • 1000:$0.2380
  • 3000:$0.2030
영상 부분 # 설명
IPN70R2K0P7SATMA1

Mfr.#: IPN70R2K0P7SATMA1

OMO.#: OMO-IPN70R2K0P7SATMA1

MOSFET CONSUMER
IPN70R2K1CEATMA1

Mfr.#: IPN70R2K1CEATMA1

OMO.#: OMO-IPN70R2K1CEATMA1

MOSFET CONSUMER
IPN70R2K0P7SATMA1

Mfr.#: IPN70R2K0P7SATMA1

OMO.#: OMO-IPN70R2K0P7SATMA1-INFINEON-TECHNOLOGIES

COOLMOS P7 700V SOT-223
IPN70R2K0P7SATMA1-CUT TAPE

Mfr.#: IPN70R2K0P7SATMA1-CUT TAPE

OMO.#: OMO-IPN70R2K0P7SATMA1-CUT-TAPE-1190

신규 및 오리지널
IPN70R2K1CEATMA1

Mfr.#: IPN70R2K1CEATMA1

OMO.#: OMO-IPN70R2K1CEATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CHANNEL 750V 4A SOT223
유효성
재고:
Available
주문 시:
5000
수량 입력:
IPN70R2K1CEATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.60
US$0.60
10
US$0.50
US$5.04
100
US$0.31
US$30.70
1000
US$0.24
US$238.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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