STGWT80H65DFB

Mfr. #:: STGWT80H65DFB
제조사:: STMicroelectronics
설명:: IGBT Transistors Trench gate H series 650V 80A HiSpd
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: STGWT80H65DFB 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: STGWT80H65DFB 추가 정보 STGWT80H65DFB Product Details

제품 속성
속성 값

제조사:: ST마이크로일렉트로닉스

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-3P

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 650 V

수집기-이미터 포화 전압:: 1.6 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 120 A

Pd - 전력 손실:: 469 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

시리즈:: STGWT80H65DFB

포장:: 튜브

연속 수집가 현재 IC 최대:: 80 A

상표:: ST마이크로일렉트로닉스

게이트-이미터 누설 전류:: 250 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 300

하위 카테고리:: IGBT

단위 무게:: 0.238311 oz

Tags: STGWT8, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT80H65DFB 설명

***ure Electronics: HB Series 650 V 120 A High Speed Trench Gate Field-Stop IGBT - TO-3P

***ical: Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube

***va Crawler: Trench gate field-stop 650 V, 80 A high speed HB series IGBT

***Components: In a Tube of 30, STMicroelectronics STGWT80H65DFB IGBT

***p One Stop Global: Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube

***et Europe: Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube

***ied Electronics & Automation: IGBT Trench HB Series 650V 80A TO-3P

***nell: IGBT, SINGLE, 650V, 120A, TO-3P

***i-Key: IGBT 650V 120A 469W TO3P-3L

***ark: IGBT, SINGLE, 650V, 120A, TO-3P; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes

STGWT80H65DFB 추가 정보

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

부분 #	제조	설명	재고	가격
STGWT80H65DFB DISTI # 32924310	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	300	200:$3.7485 50:$3.9780 10:$4.1182 3:$9.0780
STGWT80H65DFB DISTI # 497-14234-5-ND	STMicroelectronics	IGBT 650V 120A 469W TO3P-3L RoHS: Compliant Min Qty: 1 Container: Tube	8In Stock	510:$4.8825 120:$5.6070 30:$6.4577 10:$6.7730 1:$7.5000
STGWT80H65DFB DISTI # STGWT80H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube (Alt: STGWT80H65DFB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€3.4900 500:€3.6900 100:€3.8900 50:€3.9900 25:€4.1900 10:€4.3900 1:€4.7900
STGWT80H65DFB DISTI # STGWT80H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80H65DFB) RoHS: Compliant Min Qty: 300 Container: Tube	Americas - 0	3000:$3.7900 1800:$3.8900 1200:$3.9900 600:$4.1900 300:$4.3900
STGWT80H65DFB DISTI # 45AC7598	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-3P,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	71	250:$5.1500 100:$5.3900 50:$5.8000 25:$6.2100 10:$6.5100 1:$7.2000
STGWT80H65DFB DISTI # 511-STGWT80H65DFB	STMicroelectronics	IGBT Transistors Trench gate H series 650V 80A HiSpd RoHS: Compliant	193	1:$7.1300 10:$6.4500 25:$6.1500 100:$5.3400 250:$5.1000
STGWT80H65DFB DISTI # 8297136P	STMicroelectronics	IGBT TRENCH HB SERIES 650V 80A TO-3P, TU	184	10:£2.9500
STGWT80H65DFB DISTI # 2807181	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-3P RoHS: Compliant	222	1020:$6.4500 510:$7.4100 120:$8.5000 30:$9.7900 1:$11.3700
STGWT80H65DFB DISTI # 2807181	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-3P	222	100:£3.9100 50:£4.2100 10:£4.5000 5:£5.2200 1:£5.7200

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유효성

재고:: 183
주문 시:: 2166
수량 입력:

STGWT80H65DFB의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$7.13~~; ~~US$7.13~~

10: ~~US$6.45~~; ~~US$64.50~~

25: ~~US$6.15~~; ~~US$153.75~~

100: ~~US$5.34~~; ~~US$534.00~~

250: ~~US$5.10~~; ~~US$1 275.00~~

시작

STGWT8 4
STGWT 37
STGW 217
STG 909

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STGWT80H65DFB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes