SISA10DN-T1-GE3

Mfr. #:: SISA10DN-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 30V 30A 1212-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SISA10DN-T1-GE3 데이터 시트
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ECAD Model:
추가 정보:: SISA10DN-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SISA10DN-GE3

장착 스타일: SMD/SMT

상표명: TrenchFET

패키지 케이스: PowerPAKR 1212-8

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: PowerPAKR 1212-8

구성: 듀얼

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 39W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 2425pF @ 15V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 30A (Tc)

Rds-On-Max-Id-Vgs: 3.7 mOhm @ 10A, 10V

Vgs-th-Max-Id: 2.2V @ 250μA

Gate-Charge-Qg-Vgs: 51nC @ 10V

Pd 전력 손실: 39 W

최대 작동 온도: + 150 C

Vgs 게이트 소스 전압: 2.2 V

Id-연속-드레인-전류: 30 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 3.7 mOhms

트랜지스터 극성: N-채널

Qg-Gate-Charge: 15.4 nC

채널 모드: 상승

Tags: SISA10DN-T, SISA10, SISA1, SISA, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISA10DN-T1-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

부분 #	제조	설명	재고	가격
SISA10DN-T1-GE3 DISTI # V72:2272_09216117	Vishay Intertechnologies	Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 RoHS: Compliant	482	250:$0.5832 100:$0.5846 25:$0.7175 10:$0.7201 1:$0.8320
SISA10DN-T1-GE3 DISTI # SISA10DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 30A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	165In Stock	1000:$0.5099 500:$0.6458 100:$0.8328 10:$1.0540 1:$1.1900
SISA10DN-T1-GE3 DISTI # SISA10DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 30A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	165In Stock	1000:$0.5099 500:$0.6458 100:$0.8328 10:$1.0540 1:$1.1900
SISA10DN-T1-GE3 DISTI # SISA10DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 30A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.4620
SISA10DN-T1-GE3 DISTI # 25789965	Vishay Intertechnologies	Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 RoHS: Compliant	482	250:$0.5832 100:$0.5846 25:$0.7175 16:$0.7201
SISA10DN-T1-GE3 DISTI # SISA10DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 T/R (Alt: SISA10DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SISA10DN-T1-GE3 DISTI # SISA10DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA10DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4359 6000:$0.4229 12000:$0.4059 18000:$0.3949 30000:$0.3839
SISA10DN-T1-GE3 DISTI # 68W7090	Vishay Intertechnologies	MOSFET, N CH, 30V, 30A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:39W, RoHS Compliant: Yes	0	1:$0.4440 3000:$0.4410 6000:$0.4200 12000:$0.3720
SISA10DN-T1-GE3 DISTI # 68W7089	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 30A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.1V , RoHS Compliant: Yes	0	1:$1.0500 25:$0.8650 50:$0.7640 100:$0.6630 250:$0.6170 500:$0.5710 1000:$0.5010
SISA10DN-T1-GE3 DISTI # 70243891	Vishay Siliconix	Semiconcuctor,Mosfet,TrenchFET,N-Channel,30V,30A,3.7mohm @ 10V,PowerPAK 1212-8 RoHS: Compliant	0	3000:$0.4150
SISA10DN-T1-GE3 DISTI # 78-SISA10DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	294	1:$1.0500 10:$0.8650 100:$0.6630 500:$0.5710 1000:$0.5400 3000:$0.5000
SISA10DN-T1-GE3 DISTI # 7879409P	Vishay Intertechnologies	MOSFET N-CH 30V 25A POWERPAK 1212-8, RL	1050	100:£0.5220
SISA10DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8	Americas -	3000:$0.4250 6000:$0.4020 12000:$0.3890 24000:$0.3830
SISA10DN-T1-GE3 DISTI # C1S803601946001	Vishay Intertechnologies	MOSFETs	482	100:$0.5809 50:$0.6965 25:$0.7146 10:$0.7177

영상	부분 #	설명
	Mfr.#: SISA10DN-T1-GE3 OMO.#: OMO-SISA10DN-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SISA10DN OMO.#: OMO-SISA10DN-1190	신규 및 오리지널
	Mfr.#: SISA10DN-T1 OMO.#: OMO-SISA10DN-T1-1190	신규 및 오리지널
	Mfr.#: SISA10DN-T1-E3 OMO.#: OMO-SISA10DN-T1-E3-1190	신규 및 오리지널
	Mfr.#: SISA10DN-T1-GE3 OMO.#: OMO-SISA10DN-T1-GE3-VISHAY	MOSFET N-CH 30V 30A 1212-8

SISA10DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes