IS43R86400D-6TLI

Mfr. #:: IS43R86400D-6TLI
제조사:: ISSI
설명:: DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IS43R86400D-6TLI 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IS43R86400D-6TLI 추가 정보

제품 속성
속성 값

제조사:: ISSI

제품 카테고리:: 적은 양

RoHS:: Y

유형:: SDRAM - DDR1

데이터 버스 폭:: 8 bit

조직:: 64 M x 8

패키지/케이스:: TSOP-66

메모리 크기:: 512 Mbit

최대 클록 주파수:: 166 MHz

액세스 시간:: 6 ns

공급 전압 - 최대:: 2.7 V

공급 전압 - 최소:: 2.3 V

공급 전류 - 최대:: 370 mA

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

시리즈:: IS43R86400D

포장:: 쟁반

상표:: ISSI

장착 스타일:: SMD/SMT

습기에 민감한:: 네

작동 공급 전압:: 2.5 V

상품 유형:: 적은 양

공장 팩 수량:: 108

하위 카테고리:: 메모리 및 데이터 저장

단위 무게:: 0.019612 oz

Tags: IS43R86400D-6TLI, IS43R86400D-6T, IS43R86400D-6, IS43R86400D, IS43R86400, IS43R86, IS43R8, IS43R, IS43, IS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS43R86400D-6TLI 평가 및 리뷰

E***s

Tittle claims 20PCS but description states 10PCS. I would suggest changing the tittle to match the description to prevent confusion. Other than that, the product is as described.

2019-05-07

N***k

Fast delivery, i liked everything, i recommend the seller.

2019-08-20

S***v

All the norms, received. At first glance, everything is in place. Then i will add, if that is not so

2019-04-30

IS43R86400D-6TLI 설명

***et: DRAM Chip DDR SDRAM 512Mbit 64M X 8 2.5V 66-Pin TSOP-II Tray

***ark: 512M, 2.5v, DDR, 64Mx8, 166MHz, 66 pin TSOP II (400 mil) RoHS, IT

***I SCT: DDR SDRAM, 64Mx8, 2.5V, 8K, TSOP2-66,RoHS

***ponent Sense: IC DRAM DDR 512M 64MX8 6NS TSO

IS43R86400D-6TLI 추가 정보

DDR SDRAM: ISSI's 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK.Learn More

IS43R32800D 8Mx32 256-Mbit DDR SDRAM: ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.

IS43R86400D 512Mb DDR SDRAM: ISSI IS43R86400D 512Mb DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. ISSI IS43R86400D 512Mb DDR SDRAM features programmable burst length, burst sequence, and CAS latency, enabling further advantages.

Market price

부분 #	제조	설명	재고	가격
IS43R86400D-6TLI DISTI # 26639538	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 512Mbit 64Mx8 2.5V 66-Pin TSOP-II RoHS: Compliant	6588	108:$7.5940
IS43R86400D-6TLI DISTI # IS43R86400D-6TLI-ND	Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 66TSOP II RoHS: Compliant Min Qty: 108 Container: Tray	Temporarily Out of Stock	108:$7.5940
IS43R86400D-6TLI-TR DISTI # IS43R86400D-6TLI-TR-ND	Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 66TSOP II RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$7.0157
IS43R86400D-6TLI DISTI # IS43R86400D-6TLI	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 512M-Bit 64M x 8 2.5V 66-Pin TSOP-II - Bulk (Alt: IS43R86400D-6TLI) RoHS: Compliant Min Qty: 108 Container: Bulk	Americas - 0	108:$7.2900 216:$6.9900 432:$6.7900 648:$6.4900 1080:$6.2900
IS43R86400D-6TLI DISTI # IS43R86400D-6TLI	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 512Mbit 64M X 8 2.5V 66-Pin TSOP-II Tray (Alt: IS43R86400D-6TLI) RoHS: Compliant Min Qty: 1 Container: Tray	Europe - 0	1:€7.9900 10:€7.3900 25:€7.0900 50:€6.7900 100:€6.4900 500:€6.2900 1000:€5.8900
IS43R86400D-6TLI-TR DISTI # IS43R86400D-6TLI-TR	Integrated Silicon Solution Inc	- Tape and Reel (Alt: IS43R86400D-6TLI-TR) RoHS: Compliant Min Qty: 1500 Container: Reel	Americas - 0	1500:$7.3900 3000:$7.1900 6000:$6.8900 9000:$6.5900 15000:$6.3900
IS43R86400D-6TLI DISTI # 870-IS43R86400D-6TLI	Integrated Silicon Solution Inc	DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM RoHS: Compliant	93	1:$9.5800 10:$8.8700 25:$8.6700 50:$8.6200 100:$7.5900 250:$7.2100 500:$7.1400 1000:$6.9000
IS43R86400D-6TLI-TR DISTI # 870-43R86400D6TLITR	Integrated Silicon Solution Inc	DRAM 512M (64Mx8) 166MHz DDR 2.5v RoHS: Compliant	0	1:$9.7400 10:$9.0100 25:$8.8100 50:$8.7600 100:$7.7100 250:$7.3300 500:$7.2500 1000:$7.0100 1500:$6.4500

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