A3T21H450W23SR6

A3T21H450W23SR6
Mfr. #:
A3T21H450W23SR6
제조사:
NXP Semiconductors
설명:
AIRFAST RF POWER LDMOS TRANSISTO
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
A3T21H450W23SR6 데이터 시트
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추가 정보:
A3T21H450W23SR6 추가 정보 A3T21H450W23SR6 Product Details
제품 속성
속성 값
Tags
A3T21H45, A3T21H4, A3T21, A3T2, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Airfast Rf Power Ldmos Transistor, 2110-2200 Mhz, 87 W Avg., 30 V
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
***hardson RFPD
RF POWER TRANSISTOR
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
부분 # 제조 설명 재고 가격
A3T21H450W23SR6
DISTI # A3T21H450W23SR6-ND
NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$117.1223
A3T21H450W23SR6
DISTI # A3T21H450W23SR6
Avnet, Inc.Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V - Tape and Reel (Alt: A3T21H450W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
  • 1500:$111.9900
  • 900:$114.1900
  • 600:$118.4900
  • 300:$123.2900
  • 150:$128.2900
A3T21H450W23SR6
DISTI # 771-A3T21H450W23SR6
NXP SemiconductorsRF MOSFET Transistors A3T21H450W23S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant
0
  • 1:$134.7400
  • 5:$132.0900
  • 10:$125.9300
  • 25:$123.2900
  • 100:$117.1200
  • 150:$108.9500
A3T21H450W23SR6
DISTI # A3T21H450W23SR6
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
148
  • 1:$147.2500
  • 10:$136.1000
  • 25:$132.0900
영상 부분 # 설명
A3T21H450W23SR6

Mfr.#: A3T21H450W23SR6

OMO.#: OMO-A3T21H450W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V
A3T21H456W23SR6

Mfr.#: A3T21H456W23SR6

OMO.#: OMO-A3T21H456W23SR6

RF MOSFET Transistors RF PWR LDMOS TRNSTR 2110-2200 MHz 87W30V
A3T21H400W23SR6

Mfr.#: A3T21H400W23SR6

OMO.#: OMO-A3T21H400W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V
A3T21H455W23SR6

Mfr.#: A3T21H455W23SR6

OMO.#: OMO-A3T21H455W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V
A3T21H450W23SR6

Mfr.#: A3T21H450W23SR6

OMO.#: OMO-A3T21H450W23SR6-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
A3T21H455W23SR6

Mfr.#: A3T21H455W23SR6

OMO.#: OMO-A3T21H455W23SR6-NXP-SEMICONDUCTORS

FORECAST ACP1230S-4L2L
유효성
재고:
Available
주문 시:
4500
수량 입력:
A3T21H450W23SR6의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$163.42
US$163.42
10
US$155.25
US$1 552.54
100
US$147.08
US$14 708.25
500
US$138.91
US$69 455.65
1000
US$130.74
US$130 740.00
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