IRF460

Mfr. #:: IRF460
제조사:: IR
설명:
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF460 데이터 시트
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속성 값

제조사: IR

제품 카테고리: IC 칩

Tags: IRF460, IRF46, IRF4, IRF

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF460 설명

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ure Electronics: IRF460 Seris 500 V 0.27 Ohm 21 A N-Channel Hexfet®Transistor - TO-3

***ment14 APAC: MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1200mJ; Current Iar:21A; Current Id Max:21A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:84A; Repetitive Avalanche Energy Max:30mJ; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:11.5g

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ernational Rectifier: 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package

***nell: MOSFET, N, TO-3; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:4.5A; Resistance, Rds On:1.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:1.1mJ; Current Iar:4.5A; Current, Idm Pulse:18A; Fixing Centres:30mm; Lead Spacing:11mm; No. of Pins:2; Power Dissipation:75W; Power, Pd:75W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:500V; Voltage, Vgs th Max:4V; Weight:0.012kg

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ource: 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A IRF240 with Standard Packaging

***ure Electronics: Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3

***el Electronic: Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:200V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: No

***nell: MOSFET, N, TO-3; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3; Termination Type:Through Hole; Centres, Fixing:30mm; Current, Iar:18A; Current, Idm Pulse:72A; Energy, Avalanche Repetitive Ear:12.5mJ; Energy, Avalanche Single Pulse Eas:450mJ; Pins, No. of:2; Pitch, Lead:11mm; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Weight:0.012kg

***ark: Trans Mosfet N-Ch 400V 14A 3-Pin(2+Tab) To-3. Note :rohs Non-Compliant Rohs Compliant: No

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***el Electronic: Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ineon SCT: -100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2

***el Electronic: Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-18A; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-204AA ;RoHS Compliant: No

***ment14 APAC: MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:-18A; Current Temperature:25°C; Device Marking:IRF9140; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:76A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ure Electronics: Single N-Channel 400 V 150 W 110 nC Hexfet Transistor Through Hole - TO-3

***et: 100V THRU 500V, UP TO 38A, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 2TO-204

***ure Electronics: N-Channel 100 V 40 mOhm 97 nC Through Hole Advanced Power Mosfet - TO-3P

***Yang: Trans MOSFET N-CH 100V 43A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube

***inecomponents.com: N-CH/100V/40A/0.04OHM/Substitute of IRFP150 & IRFP150N

***r Electronics: Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Af 100V 40Mohm To3Pn Rohs Compliant: Yes

***enic: 100V 43A 40m´Î@10V21.5A 193W 4V@250uA 185pF@25V 1.75nF@25V 75nC@10V -55¡Í~+175¡Í@(Tj) TO-3P MOSFETs ROHS

***i-Key: PFET, 43A I(D), 100V, 0.04OHM, 1

***eco: IRFP150A.,3LD PLAS EXPOSED HEA T SINK

***el Electronic: IC REG LIN 1.8V 150MA VCSP60N1

Market price

부분 #	제조	재고	가격
IRF460H	Harris Semiconductor	6	1:$22.1000
IRF460	International Rectifier	2
IRF460	International Rectifier	191

영상	부분 #	설명
	Mfr.#: IRFPE50PBF OMO.#: OMO-IRFPE50PBF	MOSFET N-CH 800V HEXFET MOSFET
	Mfr.#: IRF9530 OMO.#: OMO-IRF9530	MOSFET RECOMMENDED ALT 844-IRF9530PBF
	Mfr.#: IRFR9010PBF OMO.#: OMO-IRFR9010PBF-VISHAY	MOSFET P-CH 50V 5.3A DPAK
	Mfr.#: IRF9610STRR OMO.#: OMO-IRF9610STRR-VISHAY	MOSFET P-CH 200V 1.8A D2PAK
	Mfr.#: IRFM340 OMO.#: OMO-IRFM340-1190	Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: IRFM340)
	Mfr.#: IRF7325 OMO.#: OMO-IRF7325-INFINEON-TECHNOLOGIES	MOSFET 2P-CH 12V 7.8A 8-SOIC
	Mfr.#: IRF8010L OMO.#: OMO-IRF8010L-1190	신규 및 오리지널
	Mfr.#: IRF8788PBF-1 OMO.#: OMO-IRF8788PBF-1-1190	신규 및 오리지널
	Mfr.#: IRFP450LC OMO.#: OMO-IRFP450LC-VISHAY	MOSFET N-Chan 500V 14 Amp
	Mfr.#: IRF730ASPBF OMO.#: OMO-IRF730ASPBF-VISHAY	IGBT Transistors MOSFET N-Chan 400V 5.5 Amp

IRF460

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes