IPB011N04N G

IPB011N04N G
Mfr. #:
IPB011N04N G
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB011N04N G 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPB011N04N G 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-7
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
40 V
Id - 연속 드레인 전류:
180 A
Rds On - 드레인 소스 저항:
1.1 mOhms
Vgs - 게이트 소스 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
250 W
구성:
하나의
채널 모드:
상승
상표명:
옵티모스
포장:
키:
4.4 mm
길이:
10 mm
시리즈:
OptiMOS 3
트랜지스터 유형:
1 N-Channel
너비:
9.25 mm
상표:
인피니언 테크놀로지스
가을 시간:
13 ns
상품 유형:
MOSFET
상승 시간:
10 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
63 ns
일반적인 켜기 지연 시간:
40 ns
부품 번호 별칭:
IPB011N04NGATMA1 IPB11N4NGXT SP000388298
단위 무게:
0.056438 oz
Tags
IPB011N04NG, IPB011N04N, IPB011, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
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유효성
재고:
Available
주문 시:
1500
수량 입력:
IPB011N04N G의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.71
US$2.71
10
US$2.30
US$23.00
100
US$1.99
US$199.00
250
US$1.89
US$472.50
500
US$1.70
US$850.00
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