FQB4N80TM

FQB4N80TM
Mfr. #:
FQB4N80TM
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 800V N-Channel QFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FQB4N80TM 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
E
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
800 V
Id - 연속 드레인 전류:
3.9 A
Rds On - 드레인 소스 저항:
3.6 Ohms
Vgs - 게이트 소스 전압:
30 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
3.13 W
구성:
하나의
채널 모드:
상승
포장:
키:
4.83 mm
길이:
10.67 mm
시리즈:
FQB4N80
트랜지스터 유형:
1 N-Channel
유형:
MOSFET
너비:
9.65 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
3.8 S
가을 시간:
35 ns
상품 유형:
MOSFET
상승 시간:
45 ns
공장 팩 수량:
800
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
35 ns
일반적인 켜기 지연 시간:
16 ns
단위 무게:
0.046296 oz
Tags
FQB4N, FQB4, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
***ure Electronics
N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3
***et Europe
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 800V, 3.9A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:130W; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
부분 # 제조 설명 재고 가격
FQB4N80TM
DISTI # V72:2272_06301137
ON SemiconductorN-CH/800V/3.9A/3.6OHM520
  • 500:$0.8658
  • 250:$0.9806
  • 100:$1.0187
  • 25:$1.3024
  • 10:$1.3043
  • 1:$1.5051
FQB4N80TM
DISTI # FQB4N80TMCT-ND
ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
803In Stock
  • 100:$1.2683
  • 10:$1.5780
  • 1:$1.7500
FQB4N80TM
DISTI # FQB4N80TMDKR-ND
ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
803In Stock
  • 100:$1.2683
  • 10:$1.5780
  • 1:$1.7500
FQB4N80TM
DISTI # FQB4N80TMTR-ND
ON SemiconductorMOSFET N-CH 800V 3.9A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 800:$0.9084
FQB4N80TM
DISTI # 30703250
ON SemiconductorN-CH/800V/3.9A/3.6OHM3200
  • 9600:$0.6421
  • 2400:$0.6673
  • 800:$0.7530
FQB4N80TM
DISTI # 29055410
ON SemiconductorN-CH/800V/3.9A/3.6OHM520
  • 500:$0.8658
  • 250:$0.9806
  • 100:$1.0187
  • 25:$1.3024
  • 12:$1.3043
FQB4N80TM
DISTI # FQB4N80TM
ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$0.5649
  • 1600:$0.5609
  • 3200:$0.5539
  • 4800:$0.5469
  • 8000:$0.5339
FQB4N80TM
DISTI # FQB4N80TM
ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 800:€0.8359
  • 1600:€0.6839
  • 3200:€0.6269
  • 4800:€0.5779
  • 8000:€0.5369
FQB4N80TM
DISTI # FQB4N80TM
ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
  • 800:$0.6872
  • 1600:$0.6608
  • 2400:$0.6363
  • 4000:$0.6136
  • 8000:$0.5925
  • 20000:$0.5727
  • 40000:$0.5633
FQB4N80TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
2400
  • 1000:$1.0300
  • 500:$1.0800
  • 100:$1.1300
  • 25:$1.1800
  • 1:$1.2700
FQB4N80TM
DISTI # 512-FQB4N80TM
ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant
1036
  • 1:$1.6400
  • 10:$1.4000
  • 100:$1.0700
  • 500:$0.9460
  • 800:$0.7470
  • 2400:$0.6620
  • 9600:$0.6370
FQB4N80TM
DISTI # 6710908P
ON SemiconductorMOSFET N-CHANNEL 800V 3.9A D2PAK, RL854
  • 5:£0.5000
FQB4N80TMFairchild Semiconductor Corporation 
RoHS: Compliant
Europe - 800
    FQB4N80TM
    DISTI # C1S541901511368
    ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    3200
    • 2400:$0.6880
    • 1600:$0.8310
    • 800:$0.8990
    FQB4N80TM
    DISTI # C1S541901596147
    ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    520
    • 250:$0.9806
    • 100:$1.0187
    • 25:$1.3024
    • 10:$1.3043
    FQB4N80TM
    DISTI # 2453890RL
    ON SemiconductorMOSFET, N-CH, 800V, 3.9A, TO-263AB-3
    RoHS: Compliant
    0
    • 1:$2.6000
    • 10:$2.2200
    • 100:$1.7000
    • 500:$1.5100
    • 800:$1.1900
    • 2400:$1.0500
    • 9600:$1.0100
    FQB4N80TM
    DISTI # 2453890
    ON SemiconductorMOSFET, N-CH, 800V, 3.9A, TO-263AB-3
    RoHS: Compliant
    0
    • 1:$2.6000
    • 10:$2.2200
    • 100:$1.7000
    • 500:$1.5100
    • 800:$1.1900
    • 2400:$1.0500
    • 9600:$1.0100
    영상 부분 # 설명
    DS3680D

    Mfr.#: DS3680D

    OMO.#: OMO-DS3680D

    Gate Drivers Quad Telephone Relay
    TPD3E001DRLR

    Mfr.#: TPD3E001DRLR

    OMO.#: OMO-TPD3E001DRLR

    TVS Diodes / ESD Suppressors Low-Cap 3Ch ESD Protection Array
    LT3751EFE#PBF

    Mfr.#: LT3751EFE#PBF

    OMO.#: OMO-LT3751EFE-PBF

    Switching Voltage Regulators Capacitor Charger Controller with Low Noise Regulation
    CRCW0603330RFKEAC

    Mfr.#: CRCW0603330RFKEAC

    OMO.#: OMO-CRCW0603330RFKEAC

    Thick Film Resistors - SMD 1/10Watt 330ohms 1% Commercial Use
    GRM31CR61E476ME44K

    Mfr.#: GRM31CR61E476ME44K

    OMO.#: OMO-GRM31CR61E476ME44K-MURATA-ELECTRONICS

    Multilayer Ceramic Capacitors MLCC - SMD/SMT
    CRCW0603330RFKEAC

    Mfr.#: CRCW0603330RFKEAC

    OMO.#: OMO-CRCW0603330RFKEAC-VISHAY-DALE

    D11/CRCW0603-C 100 330R 1% ET1
    C0603X104K5RACTU

    Mfr.#: C0603X104K5RACTU

    OMO.#: OMO-C0603X104K5RACTU-1105

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 0.1uF 10% X7R
    DS3680D

    Mfr.#: DS3680D

    OMO.#: OMO-DS3680D-TEXAS-INSTRUMENTS

    IC QUAD PHONE RELAY DRVR 14-SOIC
    C0603C105K4PAC7411

    Mfr.#: C0603C105K4PAC7411

    OMO.#: OMO-C0603C105K4PAC7411-1190

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 16volts 1uF X5R 10%
    TPD3E001DRLR

    Mfr.#: TPD3E001DRLR

    OMO.#: OMO-TPD3E001DRLR-TEXAS-INSTRUMENTS

    ESD Suppressors Low-Cap 3Ch ESD Protection Array
    유효성
    재고:
    Available
    주문 시:
    1984
    수량 입력:
    FQB4N80TM의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.64
    US$1.64
    10
    US$1.40
    US$14.00
    100
    US$1.07
    US$107.00
    500
    US$0.95
    US$473.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
    시작
    최신 제품
    • Gate Drivers
      The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
    • NCP137 700 mA LDO Regulators
      ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
    • Compare FQB4N80TM
      FQB4N20 vs FQB4N20L vs FQB4N20LTM
    • NCP114 Low Dropout Regulators
      ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
    • LC717A00AR Touch Sensor
      These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
    • FDMQ86530L Quad-MOSFET
      ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
    Top