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RGT30NS65DGTL

RGT30NS65DGTL
Mfr. #:
RGT30NS65DGTL
제조사:
Rohm Semiconductor
설명:
IGBT Transistors 650V 15A IGBT Stop Trench
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
RGT30NS65DGTL 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RGT30NS65DGTL DatasheetRGT30NS65DGTL Datasheet (P4)
ECAD Model:
추가 정보:
RGT30NS65DGTL 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-263-3
장착 스타일:
SMD/SMT
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
1.65 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
30 A
Pd - 전력 손실:
133 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 175 C
시리즈:
RGT30NS65D
포장:
릴
연속 수집가 현재 IC 최대:
30 A
작동 온도 범위:
- 40 C to + 175 C
상표:
로옴 반도체
지속적인 수집가 전류:
15 A
게이트-이미터 누설 전류:
+/- 200 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
1000
하위 카테고리:
IGBT
부품 번호 별칭:
RGT30NS65D(LPDS)
단위 무게:
0.068654 oz
Tags
RGT30NS, RGT30N, RGT3, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 30A 133000mW 3-Pin(2+Tab) LPDS T/R
***nell
IGBT, SINGLE, 650V, 30A, TO-263S-3
***ark
Igbt, Single, 650V, 30A, To-263S-3; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:133W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-263S; No. Of Pins:3Pins; Rohs Compliant: Yes
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
부분 # 제조 설명 재고 가격
RGT30NS65DGTL
DISTI # RGT30NS65DGTLCT-ND		ROHM SemiconductorIGBT 650V 30A 133W TO-263S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		986In Stock
  • 500:$1.1266
  • 250:$1.2875
  • 100:$1.3712
  • 25:$1.6092
  • 10:$1.7060
  • 1:$1.9000
RGT30NS65DGTL
DISTI # RGT30NS65DGTLDKR-ND		ROHM SemiconductorIGBT 650V 30A 133W TO-263S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		986In Stock
  • 500:$1.1266
  • 250:$1.2875
  • 100:$1.3712
  • 25:$1.6092
  • 10:$1.7060
  • 1:$1.9000
RGT30NS65DGTL
DISTI # RGT30NS65DGTLTR-ND		ROHM SemiconductorIGBT 650V 30A 133W TO-263S
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$0.8750
  • 1000:$0.9063
RGT30NS65DGTL
DISTI # RGT30NS65DGTL		ROHM SemiconductorTrans IGBT Chip N-CH 650V 30A 3-Pin TO-263S T/R - Tape and Reel (Alt: RGT30NS65DGTL)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8019
  • 6000:$0.8239
  • 4000:$0.8719
  • 2000:$0.9269
  • 1000:$0.9879
RGT30NS65DGTL
DISTI # 76Y4983		ROHM SemiconductorIGBT, SINGLE, 650V, 30A, TO-263S-3,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:133W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-263S,No. of Pins:3Pins,RoHS Compliant: Yes80
  • 5000:$0.8140
  • 2500:$0.8420
  • 1000:$1.0400
  • 500:$1.1600
  • 100:$1.2500
  • 10:$1.5600
  • 1:$1.8400
RGT30NS65DGTL
DISTI # 755-RGT30NS65DGTL		ROHM SemiconductorIGBT Transistors 650V 15A IGBT Stop Trench
RoHS: Compliant		740
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 2000:$0.8440
  • 5000:$0.8130
  • 10000:$0.7820
RGT30NS65DGTL
DISTI # 2519779		ROHM SemiconductorIGBT, SINGLE, 650V, 30A, TO-263S-3
RoHS: Compliant		80
  • 500:$1.7000
  • 100:$1.9200
  • 10:$2.4200
  • 1:$2.8300
RGT30NS65DGTL
DISTI # 2519779		ROHM SemiconductorIGBT, SINGLE, 650V, 30A, TO-263S-380
  • 500:£0.6800
  • 250:£0.7250
  • 100:£0.7710
  • 10:£1.0100
  • 1:£1.3000
RGT30NS65DGTL
DISTI # IGBT2240		ROHM SemiconductorIGBT650V15A1,65VTO-262
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 1000:$1.3700
  • 2000:$1.2800
  • 3000:$1.2500
  • 4000:$1.1400
RGT30NS65DGTLROHM SemiconductorIGBT Transistors 650V 15A IGBT Stop Trench
RoHS: Compliant		Americas -
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    유효성
    재고:
    740
    주문 시:
    2723
    수량 입력:
    RGT30NS65DGTL의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.84
    US$1.84
    10
    US$1.57
    US$15.70
    100
    US$1.25
    US$125.00
    500
    US$1.10
    US$550.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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