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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| HGTG5N120BND DISTI # V36:1790_06301349 | ON Semiconductor | NPTPIGBT TO247 21A 1200V | 0 |
|
| HGTG5N120BND DISTI # HGTG5N120BNDFS-ND | ON Semiconductor | IGBT 1200V 21A 167W TO247 Min Qty: 1 Container: Tube | On Order |
|
| HGTG5N120BND DISTI # 34830250 | ON Semiconductor | NPTPIGBT TO247 21A 1200V | 900 |
|
| HGTG5N120BND DISTI # HGTG5N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG5N120BND) RoHS: Compliant Min Qty: 174 Container: Bulk | Americas - 0 |
|
| HGTG5N120BND DISTI # HGTG5N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG5N120BND) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG5N120BND. DISTI # 16AC0006 | ON SEMICONDUCTOR/FAIRCHILD | DC Collector Current:21A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| HGTG5N120BND | ON Semiconductor | Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | 400 |
|
| HGTG5N120BND DISTI # HGTG5N120BND | ON SEMICONDUCTOR | Transistor: IGBT,1.2kV,10A,167W,TO247-3 | 281 |
|
| HGTG5N120BND DISTI # 1505138 | ON SEMICONDUCTOR | IGBT, 1200V, 21A RoHS: Compliant | 0 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: HGTG5N120CND,5N120CND |
신규 및 오리지널 |