IRFR310TRLPBF

Mfr. #:: IRFR310TRLPBF
제조사:: Vishay / Siliconix
설명:: MOSFET N-Chan 400V 1.7 Amp
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFR310TRLPBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: E

기술:: 시

포장:: 릴

시리즈:: IRFR/U

상표:: 비쉐이 / 실리콘닉스

상품 유형:: MOSFET

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

단위 무게:: 0.050717 oz

Tags: IRFR310TR, IRFR310T, IRFR31, IRFR3, IRFR, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFR310TRLPBF 설명

***ure Electronics: Single N-Channel 400 V 3.6 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 400V 1.7A 3-Pin(2+Tab) DPAK T/R

***S: French Electronic Distributor since 1988

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:1.7A; On Resistance, Rds(on):3.6ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 3.6 Ohms;ID 1.7A;TO-252AA;PD 25W;VGS +/-20V

***ure Electronics: IRFR310 Series N-Channel 400 V 3.6 Ohm 2.5 W Power Mosfet - DPAK (TO-252)

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, 400V, 1.7A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:400V; On Resistance Rds(on):3.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:1.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:5°C/W; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:6A; SMD Marking:IRFR310; Termination Type:SMD; Voltage Vds:400V; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 400 V, 2.7 Ohm typ., 2 A SuperMESH3(TM) Power MOSFET in a DPAK package

***r Electronics: Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) DPAK T/R

***icroelectronics SCT: Power MOSFETs, 400V, 2A, DPAK, Tape and Reel

***el Electronic: ARM Microcontrollers - MCU Kinetis 128K

***et: STMICROELECTRONICS STD3N40K3 MOSFETS

***ure Electronics: Single P-Channel 400 V 7 Ohm Surface Mount HEXFET Power MOSFET in a D-PAK-3

***ark: Mosfet, P-Ch, 400V, 1.8A, To-252; Transistor Polarity:p Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:1.8A; On Resistance Rds(On):7Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

***ment14 APAC: MOSFET, P, -400V, -1.8A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:400V; On Resistance Rds(on):7ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-1.8A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.5°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:7.2A; Termination Type:SMD; Voltage Vds Typ:-400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V

***ure Electronics: Single P-Channel 400 V 7 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, P-CH, 400V, 1.8A, TO-252;

***ark: P CHANNEL MOSFET, -400V, 1.8A D-PAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:50W RoHS Compliant: No

***emi: N-Channel Power MOSFET, UniFETTM, 400V, 2A, 3.4Ω, DPAK

***ure Electronics: N-Channel 400 V 3.4 Ohm Surface Mount UniFET Mosfet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N TO-252 SMD; Transistor Polarity:N; Current, Id Cont:2A; Resistance, Rds On:3.4ohm; Case Style:DPAK; Termination Type:SMD; Current, Idm Pulse:8A; No. of Pins:2; Power Dissipation:30mW; Voltage, Vds Max:400V

***ment14 APAC: MOSFET, N-CH, 400V, 2A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:400V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: P-Channel Power MOSFET, QFET®, -400 V, -1.56 A, 6.5 Ω, DPAK

*** Source Electronics: Trans MOSFET P-CH 400V 1.56A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 400V 1.56A DPAK

***nell: MOSFET, P-CH, -400V, -1.56A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.56A; Drain Source Voltage Vds: -400V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -

***r Electronics: Power Field-Effect Transistor, 1.56A I(D), 400V, 6.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Market price

부분 #	제조	설명	재고	가격
IRFR310TRLPBF DISTI # IRFR310TRLPBFCT-ND	Vishay Siliconix	MOSFET N-CH 400V 1.7A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2975In Stock	1000:$0.7512 500:$0.9515 100:$1.2269 10:$1.5520 1:$1.7500
IRFR310TRLPBF DISTI # IRFR310TRLPBFDKR-ND	Vishay Siliconix	MOSFET N-CH 400V 1.7A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2975In Stock	1000:$0.7512 500:$0.9515 100:$1.2269 10:$1.5520 1:$1.7500
IRFR310TRLPBF DISTI # IRFR310TRLPBFTR-ND	Vishay Siliconix	MOSFET N-CH 400V 1.7A DPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.6807
IRFR310TRLPBF DISTI # IRFR310TRLPBF	Vishay Intertechnologies	Trans MOSFET N-CH 400V 1.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR310TRLPBF) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3669 6000:$0.3559 12000:$0.3409 18000:$0.3319 30000:$0.3229
IRFR310TRLPBF DISTI # IRFR310TRLPBF	Vishay Intertechnologies	Trans MOSFET N-CH 400V 1.7A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR310TRLPBF) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.5499 6000:€0.3749 12000:€0.3219 18000:€0.2979 30000:€0.2769
IRFR310TRLPBF DISTI # 844-IRFR310TRLPBF	Vishay Intertechnologies	MOSFET N-Chan 400V 1.7 Amp RoHS: Compliant	0	1:$0.8900 10:$0.7270 100:$0.5580 500:$0.4800 1000:$0.3790 3000:$0.3540 6000:$0.3360 9000:$0.3230 24000:$0.3130
IRFR310TRL DISTI # 844-IRFR310TRL	Vishay Intertechnologies	MOSFET N-Chan 400V 1.7 Amp RoHS: Not compliant	0
IRFR310TRLPBF	Vishay Intertechnologies	MOSFET N-Chan 400V 1.7 Amp RoHS: Compliant	Americas -
IRFR310TRLPBF DISTI # XSFP00000108612	Vishay Siliconix	RoHS: Compliant	4038	3000:$0.6700 4038:$0.6091

영상	부분 #	설명
	Mfr.#: TLV3701CDBVR OMO.#: OMO-TLV3701CDBVR	Analog Comparators Single Nanopower Push-Pull Comparator
	Mfr.#: MURD340T4G OMO.#: OMO-MURD340T4G	Rectifiers SCHOTTKY ULTRAFAST
	Mfr.#: SN74LVC2G04DCKR OMO.#: OMO-SN74LVC2G04DCKR	Inverters Dual.
	Mfr.#: TLV3701CDBVR OMO.#: OMO-TLV3701CDBVR-TEXAS-INSTRUMENTS	Analog Comparators Single Nanopower Push-Pull Comparato
	Mfr.#: SN74LVC2G04DCKR OMO.#: OMO-SN74LVC2G04DCKR-TEXAS-INSTRUMENTS	Inverters Dual.
	Mfr.#: MURD340T4G OMO.#: OMO-MURD340T4G-ON-SEMICONDUCTOR	Rectifiers SCHOTTKY ULTRAFAST

IRFR310TRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes