NVD5C688NLT4G

Mfr. #:: NVD5C688NLT4G
제조사:: ON Semiconductor
설명:: MOSFET T6 60V LL DPAK
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NVD5C688NLT4G 데이터 시트
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HTML Datasheet:: NVD5C688NLT4G Datasheet NVD5C688NLT4G Datasheet (P4-P6)
ECAD Model:
추가 정보:: NVD5C688NLT4G 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-252-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 60 V

Id - 연속 드레인 전류:: 17 A

Rds On - 드레인 소스 저항:: 22.8 mOhms

Vgs th - 게이트 소스 임계 전압:: 1.2 V

Vgs - 게이트 소스 전압:: 16 V

Qg - 게이트 차지:: 7 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 18 W

구성:: 하나의

채널 모드:: 상승

자격:: AEC-Q101

포장:: 릴

시리즈:: NVD5C688NL

트랜지스터 유형:: 1 N-Channel

상표:: 온세미컨덕터

순방향 트랜스컨덕턴스 - 최소:: 20 S

가을 시간:: 24 ns

상품 유형:: MOSFET

상승 시간:: 42 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 11 ns

일반적인 켜기 지연 시간:: 8 ns

단위 무게:: 0.011993 oz

Tags: NVD5C6, NVD5C, NVD5, NVD

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Vacuum Packaging with PL

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NVD5C688NLT4G 설명

***Components: In a Pack of 10, N-Channel MOSFET, 17 A, 60 V, 3-Pin DPAK ON Semiconductor NVD5C688NLT4G

***Semiconductor: Single N-Channel Power MOSFET 60V, 17A, 27.4mΩ DPAK 2500 tape and reel

***ical: Trans MOSFET N-CH 60V 7A Automotive 3-Pin(2+Tab) DPAK T/R

***i-Key: MOSFET N-CHANNEL 60V 17A DPAK

***et: MOS Power Transistors LV ( 41V-100V)

***ark: Mosfet, Aec-Q101, N-Ch, 60V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0228Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 60V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0228ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:18W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

***nell: MOSFET, AEC-Q101, CA-N, 60V, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:17A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0228ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.1V; Dissipazione di Potenza Pd:18W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)

NVD5C688NLT4G 추가 정보

NVD5C Power MOSFETs: ON Semiconductor NVD5C Power MOSFETs are AEC−Q101 Qualified and offer robust solutions for automotive applications. NVD5C Power MOSFETs offer Low RDS(on) to minimize conduction losses and low QG and Capacitance to minimize driver losses. These single N-Channel MOSFETs are housed in a compact, surface-mount DPAK package and are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.Learn More

Market price

부분 #	제조	설명	재고	가격
NVD5C688NLT4G DISTI # V72:2272_17086741	ON Semiconductor	T6 60V LL DPAK	2469	1000:$0.3220 500:$0.3640 250:$0.4060 100:$0.4479 25:$0.4899 10:$0.4951 1:$0.5961
NVD5C688NLT4G DISTI # NVD5C688NLT4GOSCT-ND	ON Semiconductor	MOSFET N-CHANNEL 60V 17A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3727In Stock	1000:$0.3002 500:$0.3753 100:$0.5066 10:$0.6570 1:$0.7500
NVD5C688NLT4G DISTI # NVD5C688NLT4GOSDKR-ND	ON Semiconductor	MOSFET N-CHANNEL 60V 17A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3727In Stock	1000:$0.3002 500:$0.3753 100:$0.5066 10:$0.6570 1:$0.7500
NVD5C688NLT4G DISTI # NVD5C688NLT4GOSTR-ND	ON Semiconductor	MOSFET N-CHANNEL 60V 17A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.2641
NVD5C688NLT4G DISTI # 26208193	ON Semiconductor	T6 60V LL DPAK	2469	1000:$0.3220 250:$0.3297 100:$0.3298 25:$0.4993 18:$0.4997
NVD5C688NLT4G DISTI # NVD5C688NLT4G	ON Semiconductor	MOS Power Transistors LV ( 41V-100V) - Tape and Reel (Alt: NVD5C688NLT4G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2159 5000:$0.2149 10000:$0.2119 15000:$0.2089 25000:$0.2039
NVD5C688NLT4G DISTI # NVD5C688NLT4G	ON Semiconductor	MOS Power Transistors LV ( 41V-100V) (Alt: NVD5C688NLT4G) RoHS: Compliant Min Qty: 2500	Europe - 0	2500:€0.3259 5000:€0.2669 10000:€0.2439 15000:€0.2259 25000:€0.2089
NVD5C688NLT4G DISTI # 18AC0083	ON Semiconductor	MOSFET, AEC-Q101, N-CH, 60V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0228ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes	2405	1:$0.6200 10:$0.5140 25:$0.4530 50:$0.3930 100:$0.3320 250:$0.3100 500:$0.2870 1000:$0.2650
NVD5C688NLT4G DISTI # 863-NVD5C688NLT4G	ON Semiconductor	MOSFET T6 60V LL DPAK RoHS: Compliant	3929	1:$0.6200 10:$0.5140 100:$0.3320 1000:$0.2650 2500:$0.2240 10000:$0.2160 25000:$0.2070
NVD5C688NLT4G DISTI # 1412081	ON Semiconductor	MOSFET N-CHANNEL 60V 17A AUTO DPAK3, RL	2470	2500:£0.1580 12500:£0.1550
NVD5C688NLT4G DISTI # C1S541901626961	ON Semiconductor	MOSFETs RoHS: Compliant	2469	250:$0.3297 100:$0.3298 25:$0.4993 10:$0.4997
NVD5C688NLT4G DISTI # 2760518	ON Semiconductor	MOSFET, AEC-Q101, N-CH, 60V, TO-252 RoHS: Compliant	2395	1:$1.1900 10:$1.0400 100:$0.8020 500:$0.5940 1000:$0.4760
NVD5C688NLT4G DISTI # 2760518	ON Semiconductor	MOSFET, AEC-Q101, N-CH, 60V, TO-252 RoHS: Compliant	2395	5:£0.4400 25:£0.4100 100:£0.3800 250:£0.3490 500:£0.3190

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NVD5C688NLT4G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes