IRF1404ZLPBF

Mfr. #:: IRF1404ZLPBF
제조사:: IR
설명:: IGBT Transistors MOSFET MOSFT 40V 190A 3.7mOhm 100nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF1404ZLPBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:

제품 속성
속성 값

제조사: IR

제품 카테고리: FET - 단일

Tags: IRF1404Z, IRF1404, IRF140, IRF14, IRF1, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF1404ZLPBF 설명

***ernational Rectifier: 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package

***ical: Trans MOSFET N-CH 40V 190A 3-Pin(3+Tab) TO-262

***i-Key: MOSFET N-CH 40V 120A TO-262

*** International: IRF1404ZLPBF IR

***ineon SCT: Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ment14 APAC: MOSFET, N CH, 40V, 160A, TO-262; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:180A; Power Dissipation Pd:200W; Voltage Vgs Max:20V

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushless Motor Drive

***ineon SCT: Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 40V 180A Automotive 3-Pin(3+Tab) TO-262 Tube

***ure Electronics: Single N-Channel 40 V 5.9 mOhm 75 nC Automotive HEXFET® Power Mosfet - TO-262-3

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***ment14 APAC: MOSFET,W DIODE,N CH,40V,160A,TO262; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Voltage Vgs Max:16V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;TO-262;PD 200W;VGS +/-20V

***ure Electronics: Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - TO-262

***roFlash: Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: N CHANNEL MOSFET, 40V, 162A, TO-262; Tra; N CHANNEL MOSFET, 40V, 162A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

***(Formerly Allied Electronics): MOSFET, 30V, 140A, 6 MOHM, 93.3 NC QG, LOGIC LEVEL, TO-262

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
64-2105PBF DISTI # 64-2105PBF-ND	Infineon Technologies AG	MOSFET N-CH 40V 75A TO-262 RoHS: Compliant Min Qty: 350 Container: Tube	Limited Supply - Call
IRF1404ZLPBF DISTI # 70018166	Infineon Technologies AG	40V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-262 PACKAGE RoHS: Compliant	0	350:$3.6100 700:$3.5380 1750:$3.4300 3500:$3.2850 8750:$3.0690
IRF1404ZLPBF DISTI # 942-IRF1404ZLPBF	Infineon Technologies AG	MOSFET MOSFT 40V 190A 3.7mOhm 100nC RoHS: Compliant	0

관련 상품

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	Mfr.#: IRF1407 OMO.#: OMO-IRF1407-1190	POWER FIELD-EFFECT TRANSISTOR, 130A I(D), 75V, 0.0078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB