SI5517DU-T1-GE3

Mfr. #:: SI5517DU-T1-GE3
제조사:: Vishay
설명:: MOSFET N/P-CH 20V 6A CHIPFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI5517DU-T1-GE3 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI5517DU-GE3

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR ChipFET 듀얼

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: PowerPAKR 칩셋 듀얼

구성: 1 N-Channel 1 P-Channel

FET형: N 및 P-채널

파워맥스: 8.3W

트랜지스터형: 1 N-Channel 1 P-Channel

드레인-소스 전압 Vdss: 20V

입력-커패시턴스-Ciss-Vds: 520pF @ 10V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 6A

Rds-On-Max-Id-Vgs: 39 mOhm @ 4.4A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Charge-Qg-Vgs: 16nC @ 8V

Pd 전력 손실: 2.3 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 10 ns 55 ns

상승 시간: 65 ns 35 ns

Vgs 게이트 소스 전압: 8 V

Id-연속-드레인-전류: 7.2 A

Vds-드레인-소스-고장-전압: 20 V

Rds-On-Drain-Source-Resistance: 32 mOhms 60 mOhms

트랜지스터 극성: N-채널 P-채널

일반 꺼짐 지연 시간: 40 ns 40 ns

일반 켜기 지연 시간: 20 ns 8 ns

채널 모드: 상승

Tags: SI5517, SI551, SI55, SI5

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5517DU-T1-GE3 설명

***p One Stop Global: Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R

***Components: On a Reel of 3000, Dual N/P-Channel-Channel MOSFET, 3.7 A, 7.2 A, 20 V, 8-Pin PowerPAK ChipFET Vishay SI5517DU-T1-GE3

***ure Electronics: MOSFET 20V 6.0A 8.3W 39/72mohm @ 4.5V

***ied Electronics & Automation: Trans MOSFET N/P-CH 20V 7.2A/4.6

***i-Key: MOSFET N/P-CH 20V 6A CHIPFET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:PowerPAK ChipFET Dual; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
SI5517DU-T1-GE3 DISTI # V36:1790_09216229	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	3000	3000:$0.4654
SI5517DU-T1-GE3 DISTI # V72:2272_09216229	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	10	10:$0.7040 1:$0.9199
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5739In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5739In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.5236
SI5517DU-T1-GE3 DISTI # 30306435	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	3000	3000:$0.4654
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R (Alt: SI5517DU-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.4282 6000:$0.3294 9000:$0.2621 15000:$0.2215 30000:$0.2039 75000:$0.1976 150000:$0.1917
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R - Tape and Reel (Alt: SI5517DU-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R (Alt: SI5517DU-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.8369 6000:€0.6009 12000:€0.4869 18000:€0.4309 30000:€0.4119
SI5517DU-T1-GE3 DISTI # 16P3788	Vishay Intertechnologies	DUAL N/P CH MOSFET, 20V, POWERPAK, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:7.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):32mohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes	0	1:$0.4770 3000:$0.4740 6000:$0.4510 12000:$0.4000
SI5517DU-T1-GE3 DISTI # 09X6441	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 20V, 6A, POWERPAK-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.032ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes	0	1:$0.9320 10:$0.9030 100:$0.7120 250:$0.6770 500:$0.6320 1000:$0.5060
SI5517DU-T1-GE3 DISTI # 70616987	Vishay Siliconix	Trans MOSFET N/P-CH 20V 7.2A/4.6 RoHS: Compliant	0	300:$0.7700 600:$0.6500 1500:$0.5700 3000:$0.5400
SI5517DU-T1-GE3 DISTI # 781-SI5517DU-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs PowerPAK ChipFET RoHS: Compliant	3065	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5100 3000:$0.4760
SI5517DU-T1-GE3 DISTI # 8181334P	Vishay Intertechnologies	TRANS MOSFET N/P-CH 20V 7.2A/4.6, RL	3160	200:£0.2510
SI5517DUT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 6000
SI5517DU-T1-GE3 DISTI # C1S803601298171	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	3000	3000:$0.4654
SI5517DU-T1-GE3 DISTI # C1S806001096569	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	10	10:$0.7967

영상	부분 #	설명
	Mfr.#: SI5517DU-T1-GE3 OMO.#: OMO-SI5517DU-T1-GE3	MOSFET 20V Vds 8V Vgs PowerPAK ChipFET
	Mfr.#: SI5517DU-T1-E3 OMO.#: OMO-SI5517DU-T1-E3-VISHAY	MOSFET N/P-CH 20V 6A CHIPFET
	Mfr.#: SI5517DU-T1-GE3 OMO.#: OMO-SI5517DU-T1-GE3-VISHAY	MOSFET N/P-CH 20V 6A CHIPFET
	Mfr.#: SI5517DU-T1-GE3DKR-ND OMO.#: OMO-SI5517DU-T1-GE3DKR-ND-1190	신규 및 오리지널

SI5517DU-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes