CSD85312Q3E

Mfr. #: CSD85312Q3E
제조사: Texas Instruments
설명: MOSFET Dual 20V N-CH Pwr MOSFETs
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: CSD85312Q3E 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD85312Q3E Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. VSON-8 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 20 V 12 A continuous drain current Rds On value of 14 mOhms Gate-Source Threshold Voltage Range: 1.1 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 2.5 W This product has a Dual configuration. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1 mm. 3.3 mm long The Transistor Type is 2 N-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 99 S 6 ns fall time MOSFET product type Rise Time is 27 ns. 2500 of 100 MOSFETs as subcategory Turn-off delay time is 24 ns. The typical turn-on delay time is 11 ns. 1. 0.001129 oz of Unit Weight

CSD85312Q3E Image

CSD85312Q3E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD85312Q3E Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: E
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: VSON-8
  • Number of Channels: 2 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 20 V
  • Id - Continuous Drain Current: 12 A
  • Rds On - Drain-Source Resistance: 14 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 1.1 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 11.7 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 2.5 W
  • Configuration: Dual
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1 mm
  • Length: 3.3 mm
  • Series: CSD85312Q3E
  • Transistor Type: 2 N-Channel
  • Width: 3.3 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 99 S
  • Fall Time: 6 ns
  • Product Type: MOSFET
  • Rise Time: 27 ns
  • Factory Pack Quantity: 2500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 24 ns
  • Typical Turn-On Delay Time: 11 ns
  • Unit Weight: 0.001129 oz

CSD85312Q3E

CSD85312Q3E Specifications

CSD85312Q3E FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is Texas Instruments.

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed VSON-8

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 2 Channel.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 12 A

  • A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?

    Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 14 mOhms

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1.1 V

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 10 V.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 2.5 W.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: What is the Height of the product?

    Q: The Height of the product is 1 mm.

  • A: Is the cutoff frequency of the product Length?

    Q: Yes, the product's Length is indeed 3.3 mm

  • A: At what frequency does the Transistor Type?

    Q: The product Transistor Type is 2 N-Channel.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed Texas Instruments

  • A: Is the cutoff frequency of the product Forward Transconductance - Min?

    Q: Yes, the product's Forward Transconductance - Min is indeed 99 S

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 6 ns.

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed MOSFET

  • A: What is the Rise Time of the product?

    Q: The Rise Time of the product is 27 ns.

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 2500.

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?

    Q: Yes, the product's Typical Turn-Off Delay Time is indeed 24 ns

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 11 ns.

  • A: Is the cutoff frequency of the product Unit Weight?

    Q: Yes, the product's Unit Weight is indeed 0.001129 oz

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1
US$0.90
US$0.90
10
US$0.77
US$7.70
100
US$0.59
US$58.70
500
US$0.52
US$259.50
1000
US$0.41
US$410.00
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