CSD87312Q3E

Mfr. #: CSD87312Q3E
제조사: Texas Instruments
설명: MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: CSD87312Q3E 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD87312Q3E Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. VSON-8 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 30 V 27 A continuous drain current Rds On value of 33 mOhms Gate-Source Threshold Voltage Range: 800 mV Gate-Source Voltage: 8 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 2.5 W This product has a Dual configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1 mm. 3.3 mm long The Transistor Type is 2 N-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 39 S 2.9 ns fall time MOSFET product type Rise Time is 16 ns. 2500 of 100 MOSFETs as subcategory Turn-off delay time is 17 ns. The typical turn-on delay time is 7.8 ns. 1. 0.001101 oz of Unit Weight

CSD87312Q3E Image

CSD87312Q3E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD87312Q3E Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: E
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: VSON-8
  • Number of Channels: 2 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 30 V
  • Id - Continuous Drain Current: 27 A
  • Rds On - Drain-Source Resistance: 33 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 800 mV
  • Vgs - Gate-Source Voltage: 8 V
  • Qg - Gate Charge: 6.3 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 2.5 W
  • Configuration: Dual
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1 mm
  • Length: 3.3 mm
  • Series: CSD87312Q3E
  • Transistor Type: 2 N-Channel
  • Width: 3.3 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 39 S
  • Fall Time: 2.9 ns
  • Product Type: MOSFET
  • Rise Time: 16 ns
  • Factory Pack Quantity: 2500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 17 ns
  • Typical Turn-On Delay Time: 7.8 ns
  • Unit Weight: 0.001101 oz

CSD87312Q3E

CSD87312Q3E Specifications

CSD87312Q3E FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is Texas Instruments.

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed VSON-8

  • A: Is the cutoff frequency of the product Number of Channels?

    Q: Yes, the product's Number of Channels is indeed 2 Channel

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 30 V

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 27 A

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 33 mOhms.

  • A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

    Q: The product Vgs th - Gate-Source Threshold Voltage is 800 mV.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 8 V.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 2.5 W.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: At what frequency does the Height?

    Q: The product Height is 1 mm.

  • A: At what frequency does the Length?

    Q: The product Length is 3.3 mm.

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 2 N-Channel

  • A: At what frequency does the Brand?

    Q: The product Brand is Texas Instruments.

  • A: What is the Forward Transconductance - Min of the product?

    Q: The Forward Transconductance - Min of the product is 39 S.

  • A: What is the Fall Time of the product?

    Q: The Fall Time of the product is 2.9 ns.

  • A: At what frequency does the Product Type?

    Q: The product Product Type is MOSFET.

  • A: What is the Rise Time of the product?

    Q: The Rise Time of the product is 16 ns.

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 2500

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 17 ns.

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 7.8 ns.

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 0.001101 oz.

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US$0.86
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US$0.66
US$66.30
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US$293.00
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US$462.00
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