CSD88539ND

Mfr. #: CSD88539ND
제조사: Texas Instruments
설명: MOSFET 60-V Dual N-Channel Power MOSFET
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: CSD88539ND 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD88539ND Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. SOIC-8 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 60 V 15 A continuous drain current Rds On value of 28 mOhms Gate-Source Threshold Voltage Range: 2.6 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 2.1 W This product has a Dual configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1.75 mm. 4.9 mm long The Transistor Type is 2 N-Channel Power MOSFET. Texas Instruments is a trusted brand for quality electronics 4 ns fall time MOSFET product type Rise Time is 9 ns. 2500 of 100 MOSFETs as subcategory Turn-off delay time is 14 ns. The typical turn-on delay time is 5 ns. 1. 0.019048 oz of Unit Weight

CSD88539ND Image

CSD88539ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD88539ND Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: SOIC-8
  • Number of Channels: 2 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 60 V
  • Id - Continuous Drain Current: 15 A
  • Rds On - Drain-Source Resistance: 28 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.6 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 7.2 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 2.1 W
  • Configuration: Dual
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1.75 mm
  • Length: 4.9 mm
  • Series: CSD88539ND
  • Transistor Type: 2 N-Channel Power MOSFET
  • Width: 3.9 mm
  • Brand: Texas Instruments
  • Fall Time: 4 ns
  • Product Type: MOSFET
  • Rise Time: 9 ns
  • Factory Pack Quantity: 2500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 14 ns
  • Typical Turn-On Delay Time: 5 ns
  • Unit Weight: 0.019048 oz

CSD88539ND

CSD88539ND Specifications

CSD88539ND FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed SMD/SMT

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is SOIC-8.

  • A: Is the cutoff frequency of the product Number of Channels?

    Q: Yes, the product's Number of Channels is indeed 2 Channel

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 60 V.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 15 A.

  • A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?

    Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 28 mOhms

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2.6 V.

  • A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

    Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 10 V

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 2.1 W

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 1.75 mm

  • A: What is the Length of the product?

    Q: The Length of the product is 4.9 mm.

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 2 N-Channel Power MOSFET

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed Texas Instruments

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 4 ns

  • A: At what frequency does the Product Type?

    Q: The product Product Type is MOSFET.

  • A: At what frequency does the Rise Time?

    Q: The product Rise Time is 9 ns.

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 2500

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?

    Q: Yes, the product's Typical Turn-Off Delay Time is indeed 14 ns

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 5 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.019048 oz.

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1
US$0.81
US$0.81
10
US$0.67
US$6.70
100
US$0.43
US$43.20
1000
US$0.34
US$345.00
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