MRF101AN

MRF101AN Overview

This product is manufactured by NXP. 8.8 A continuous drain current Vds rating of 133 V 21.1 dB is 11.5 dB. Output power: 100 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. Tube packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics Minimum forward transconductance of 7.1 S This product is equipped with 1 Channel for efficient performance. 182 W RF MOSFET Transistors product type 250 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, + 10 V Gate-Source Threshold Voltage Range: 1.7 V This product is also known by the 935377233129 number of 934069005115.

MRF101AN Image

MRF101AN Specifications

• Manufacturer: NXP
• Product Category: RF MOSFET Transistors
• Transistor Polarity: N-Channel
• Technology: Si
• Id - Continuous Drain Current: 8.8 A
• Vds - Drain-Source Breakdown Voltage: 133 V
• Gain: 21.1 dB
• Output Power: 100 W
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Packaging: Tube
• Operating Frequency: 1.8 MHz to 250 MHz
• Series: MRF101
• Type: RF Power MOSFET
• Brand: NXP Semiconductors
• Forward Transconductance - Min: 7.1 S
• Number of Channels: 1 Channel
• Pd - Power Dissipation: 182 W
• Product Type: RF MOSFET Transistors
• Factory Pack Quantity: 250
• Subcategory: MOSFETs
• Vgs - Gate-Source Voltage: - 6 V, + 10 V
• Vgs th - Gate-Source Threshold Voltage: 1.7 V
• Part # Aliases: 935377233129

MRF101AN FAQ

• A: At what frequency does the Manufacturer?

  Q: The product Manufacturer is NXP.

• A: At what frequency does the Id - Continuous Drain Current?

  Q: The product Id - Continuous Drain Current is 8.8 A.

• A: What is the Vds - Drain-Source Breakdown Voltage of the product?

  Q: The Vds - Drain-Source Breakdown Voltage of the product is 133 V.

• A: What is the Gain of the product?

  Q: The Gain of the product is 21.1 dB.

• A: At what frequency does the Output Power?

  Q: The product Output Power is 100 W.

• A: What is the Minimum Operating Temperature of the product?

  Q: The Minimum Operating Temperature of the product is - 40 C.

• A: At what frequency does the Maximum Operating Temperature?

  Q: The product Maximum Operating Temperature is + 150 C.

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is Through Hole.

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is TO-220-3.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Type?

  Q: Yes, the product's Type is indeed RF Power MOSFET

• A: At what frequency does the Brand?

  Q: The product Brand is NXP Semiconductors.

• A: Is the cutoff frequency of the product Forward Transconductance - Min?

  Q: Yes, the product's Forward Transconductance - Min is indeed 7.1 S

• A: At what frequency does the Number of Channels?

  Q: The product Number of Channels is 1 Channel.

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 182 W.

• A: At what frequency does the Product Type?

  Q: The product Product Type is RF MOSFET Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 250.

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed MOSFETs

• A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

  Q: Yes, the product's Vgs - Gate-Source Voltage is indeed - 6 V, + 10 V

• A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

  Q: The Vgs th - Gate-Source Threshold Voltage of the product is 1.7 V.

• A: At what frequency does the Part # Aliases?

  Q: The product Part # Aliases is 935377233129.