PRF13750HR9

Mfr. #: PRF13750HR9
제조사: NXP Semiconductors
설명: RF MOSFET Transistors Pre- Production RF transistor 915MHz
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: PRF13750HR9 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PRF13750HR9 Overview

This product is manufactured by NXP. 2.8 A continuous drain current Vds rating of - 500 mV, 105 V 19.5 dB is 11.5 dB. Output power: 750 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-1230H-4S-4 package/case type is utilized by this product. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. RF MOSFET Transistors product type MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.3 V

PRF13750HR9 Image

PRF13750HR9

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PRF13750HR9 Specifications
  • Manufacturer: NXP
  • Product Category: RF MOSFET Transistors
  • RoHS: Y
  • Transistor Polarity: N-Channel
  • Technology: Si
  • Id - Continuous Drain Current: 2.8 A
  • Vds - Drain-Source Breakdown Voltage: - 500 mV, 105 V
  • Gain: 19.5 dB
  • Output Power: 750 W
  • Minimum Operating Temperature: - 40 C
  • Maximum Operating Temperature: + 150 C
  • Mounting Style: SMD/SMT
  • Package / Case: NI-1230H-4S-4
  • Operating Frequency: 0.7 GHz to 1.3 GHz
  • Series: MRF13750H
  • Type: RF Power MOSFET
  • Brand: NXP Semiconductors
  • Number of Channels: 2 Channel
  • Product Type: RF MOSFET Transistors
  • Subcategory: MOSFETs
  • Vgs - Gate-Source Voltage: - 6 V, 10 V
  • Vgs th - Gate-Source Threshold Voltage: 1.3 V

PRF13750HR9

PRF13750HR9 Specifications

PRF13750HR9 FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is NXP.

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 2.8 A

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed - 500 mV, 105 V

  • A: What is the Gain of the product?

    Q: The Gain of the product is 19.5 dB.

  • A: What is the Output Power of the product?

    Q: The Output Power of the product is 750 W.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 40 C.

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed NI-1230H-4S-4

  • A: What is the Type of the product?

    Q: The Type of the product is RF Power MOSFET.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed NXP Semiconductors

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 2 Channel.

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed RF MOSFET Transistors

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed MOSFETs

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is - 6 V, 10 V.

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 1.3 V.

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