STB120NF10T4

Mfr. #: STB120NF10T4
제조사: STMicroelectronics
설명: MOSFET N-Ch 100 Volt 120Amp
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: STB120NF10T4 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB120NF10T4 Overview

This product is manufactured by STMicroelectronics. The product can operate at a maximum temperature of SMD/SMT. D2PAK-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 100 V 110 A continuous drain current Rds On value of 10.5 mOhms Gate-Source Threshold Voltage Range: 2 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. 312 W This product has a Single configuration. The Channel Mode is set to Enhancement. Reel packaging for easy dispensing The height of the product is 4.6 mm. 10.4 mm long The Transistor Type is 1 N-Channel Power MOSFET. This device belongs to the MOSFET type. STMicroelectronics is a trusted brand for quality electronics 68 ns fall time MOSFET product type Rise Time is 90 ns. 1000 of 100 MOSFETs as subcategory Turn-off delay time is 132 ns. The typical turn-on delay time is 25 ns. 1. 0.139332 oz of Unit Weight

STB120NF10T4 Image

STB120NF10T4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB120NF10T4 Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: D2PAK-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100 V
  • Id - Continuous Drain Current: 110 A
  • Rds On - Drain-Source Resistance: 10.5 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 172 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Pd - Power Dissipation: 312 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Packaging: Reel
  • Height: 4.6 mm
  • Length: 10.4 mm
  • Series: STB120NF10
  • Transistor Type: 1 N-Channel Power MOSFET
  • Type: MOSFET
  • Width: 9.35 mm
  • Brand: STMicroelectronics
  • Fall Time: 68 ns
  • Product Type: MOSFET
  • Rise Time: 90 ns
  • Factory Pack Quantity: 1000
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 132 ns
  • Typical Turn-On Delay Time: 25 ns
  • Unit Weight: 0.139332 oz

STB120NF10T4

STB120NF10T4 Specifications

STB120NF10T4 FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is STMicroelectronics.

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed D2PAK-3

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 1 Channel.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 100 V.

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 110 A

  • A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?

    Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 10.5 mOhms

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 2 V

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 10 V.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 55 C.

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 175 C.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 312 W.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Channel Mode of the product?

    Q: The Channel Mode of the product is Enhancement.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Height of the product?

    Q: The Height of the product is 4.6 mm.

  • A: What is the Length of the product?

    Q: The Length of the product is 10.4 mm.

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 1 N-Channel Power MOSFET

  • A: Is the cutoff frequency of the product Type?

    Q: Yes, the product's Type is indeed MOSFET

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed STMicroelectronics

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 68 ns.

  • A: At what frequency does the Product Type?

    Q: The product Product Type is MOSFET.

  • A: What is the Rise Time of the product?

    Q: The Rise Time of the product is 90 ns.

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 1000.

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed MOSFETs

  • A: What is the Typical Turn-Off Delay Time of the product?

    Q: The Typical Turn-Off Delay Time of the product is 132 ns.

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 25 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.139332 oz.

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