STGW80H65DFB

STGW80H65DFB Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 1.6 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 469 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 80 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 1.340411 oz of Unit Weight

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STGW80H65DFB Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-247-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 650 V
• Collector-Emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 120 A
• Pd - Power Dissipation: 469 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGW80H65DFB
• Packaging: Tube
• Continuous Collector Current Ic Max: 80 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 600
• Subcategory: IGBTs
• Unit Weight: 1.340411 oz

STGW80H65DFB FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed STMicroelectronics

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is TO-247-3.

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: At what frequency does the Collector- Emitter Voltage VCEO Max?

  Q: The product Collector- Emitter Voltage VCEO Max is 650 V.

• A: At what frequency does the Collector-Emitter Saturation Voltage?

  Q: The product Collector-Emitter Saturation Voltage is 1.6 V.

• A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

  Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 120 A.

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 469 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

• A: At what frequency does the Maximum Operating Temperature?

  Q: The product Maximum Operating Temperature is + 175 C.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Continuous Collector Current Ic Max of the product?

  Q: The Continuous Collector Current Ic Max of the product is 80 A.

• A: What is the Brand of the product?

  Q: The Brand of the product is STMicroelectronics.

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: At what frequency does the Product Type?

  Q: The product Product Type is IGBT Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 600.

• A: What is the Subcategory of the product?

  Q: The Subcategory of the product is IGBTs.

• A: Is the cutoff frequency of the product Unit Weight?

  Q: Yes, the product's Unit Weight is indeed 1.340411 oz