BD237

Mfr. #: BD237
제조사: STMicroelectronics
설명: Bipolar Transistors - BJT NPN General Purpose
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: BD237 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BD237 Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product SMD/SMT Mounting-Style TO-225AA, TO-126-3 Through Hole mounting type Supplier device package: SOT-32-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 2A . Maximum collector-emitter breakdown voltage of 80V DC current gain minimum (hFE) of Ic/Vce at 25 @ 1A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 600mV @ 100mA, 1A Power-off control: 25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 80 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.6 V The 80 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 2 A Gain-Bandwidth-Product: 3 MHz This product is capable of handling a 2 A continuous collector current. Minimum hfe for DC collector-base gain is 40.

BD237 Image

BD237

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD237 Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series 500V Transistors
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Package-Case TO-225AA, TO-126-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package SOT-32-3
  • Configuration Single
  • Power-Max 25W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 2A
  • Voltage-Collector-Emitter-Breakdown-Max 80V
  • DC-Current-Gain-hFE-Min-Ic-Vce 25 @ 1A, 2V
  • Vce-Saturation-Max-Ib-Ic 600mV @ 100mA, 1A
  • Current-Collector-Cutoff-Max 100μA (ICBO)
  • Frequency-Transition -
  • Pd-Power-Dissipation 25 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 80 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.6 V
  • Collector-Base-Voltage-VCBO 80 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 2 A
  • Gain-Bandwidth-Product-fT 3 MHz
  • Continuous-Collector-Current 2 A
  • DC-Collector-Base-Gain-hfe-Min 40

BD237

BD237 Specifications

BD237 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is 500V Transistors.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-225AA, TO-126-3.

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed SOT-32-3

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is NPN.

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 2A

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 80V.

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 25 @ 1A, 2V.

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 600mV @ 100mA, 1A.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 25 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 80 V

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 0.6 V.

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 80 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 2 A

  • A: At what frequency does the Gain-Bandwidth-Product-fT?

    Q: The product Gain-Bandwidth-Product-fT is 3 MHz.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 2 A.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 40

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