| Mfr. #: | BD912 |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | Bipolar Transistors - BJT PNP General Purpose |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | BD912 데이터 시트 |


Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: PNP Maximum current collector Ic is 15A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 15 @ 5A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 3V @ 2.5A, 10A Power-off control: 90 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 100 V The transistor polarity is PNP. The 100 V voltage rating is 40 V. - 5 V rating of 5 V Max DC collector current: 15 A Gain-Bandwidth-Product: 3 MHz Minimum hfe for DC collector-base gain is 15. 150 of 605.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD912 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed 500V Transistors
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.211644 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-220AB.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is PNP.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 15A.
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 100V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 15 @ 5A, 4V.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 3V @ 2.5A, 10A.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 90 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 100 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is PNP.
A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?
Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 100 V
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is - 5 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 15 A.
A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?
Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 3 MHz
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 15.
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?
Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 150