| Mfr. #: | BUL416T |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | Bipolar Transistors - BJT NPN HI-VOLT FAST SW |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | BUL416T 데이터 시트 |
Product belongs to the 1000V Transistors series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Transistor type: NPN Maximum current collector Ic is 6A . Maximum collector-emitter breakdown voltage of 800V DC current gain minimum (hFE) of Ic/Vce at 18 @ 700mA, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 1.33A, 4A Power-off control: 110 W Maximum operating temperature of + 150 C Rated VCEO up to 800 V The transistor polarity is NPN. 9 V rating of 5 V Max DC collector current: 9 A This product is capable of handling a 6 A continuous collector current. Minimum hfe for DC collector-base gain is 18. 32 of 605.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BUL416T Specifications
A: At what frequency does the Series?
Q: The product Series is 1000V Transistors.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.081130 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-220AB.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 6A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 800V
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 18 @ 700mA, 5V
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 1.5V @ 1.33A, 4A.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 800 V
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is NPN.
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 9 V.
A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?
Q: Yes, the product's Maximum-DC-Collector-Current is indeed 9 A
A: At what frequency does the Continuous-Collector-Current?
Q: The product Continuous-Collector-Current is 6 A.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 18.
A: At what frequency does the DC-Current-Gain-hFE-Max?
Q: The product DC-Current-Gain-hFE-Max is 32.