| Mfr. #: | CLF1G0060S-10U |
|---|---|
| 제조사: | NXP Semiconductors |
| 설명: | RF JFET Transistors Broadband RF power GaN HEMT |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | CLF1G0060S-10U 데이터 시트 |


Tube is the packaging method for this product SMD/SMT Mounting-Style Wide - 65 C to + 150 C operating temperature range for diverse applications SOT1227B GaN Si is the technology used. Configuration Single Transistor type: HEMT The device offers a 14.5 dB of 26dB. Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 3.5 GHz. The ID of continuous drain current is 1.7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 150 V. This product has a - 2 V Vgs-th gate-source threshold voltage for efficient power management. The transistor polarity is N-Channel. This product features a 380 mS of 500 S for high performance. 3 V Vgs-Gate-Source Breakdown Voltage

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CLF1G0060S-10U Specifications
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: What is the Operating-Temperature-Range of the product?
Q: The Operating-Temperature-Range of the product is - 65 C to + 150 C.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed SOT1227B
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed GaN Si
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is HEMT.
A: Is the cutoff frequency of the product Gain?
Q: Yes, the product's Gain is indeed 14.5 dB
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: Is the cutoff frequency of the product Operating-Frequency?
Q: Yes, the product's Operating-Frequency is indeed 3.5 GHz
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 1.7 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 150 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 2 V.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 380 mS.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Breakdown-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Breakdown-Voltage is indeed 3 V