CLF1G0060S-10U

Mfr. #: CLF1G0060S-10U
제조사: NXP Semiconductors
설명: RF JFET Transistors Broadband RF power GaN HEMT
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: CLF1G0060S-10U 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CLF1G0060S-10U Overview

Tube is the packaging method for this product SMD/SMT Mounting-Style Wide - 65 C to + 150 C operating temperature range for diverse applications SOT1227B GaN Si is the technology used. Configuration Single Transistor type: HEMT The device offers a 14.5 dB of 26dB. Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 3.5 GHz. The ID of continuous drain current is 1.7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 150 V. This product has a - 2 V Vgs-th gate-source threshold voltage for efficient power management. The transistor polarity is N-Channel. This product features a 380 mS of 500 S for high performance. 3 V Vgs-Gate-Source Breakdown Voltage

CLF1G0060S-10U Image

CLF1G0060S-10U

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CLF1G0060S-10U Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - FETs, MOSFETs - Single
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Operating-Temperature-Range - 65 C to + 150 C
  • Package-Case SOT1227B
  • Technology GaN Si
  • Configuration Single
  • Transistor-Type HEMT
  • Gain 14.5 dB
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Operating-Frequency 3.5 GHz
  • Id-Continuous-Drain-Current 1.7 A
  • Vds-Drain-Source-Breakdown-Voltage 150 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 2 V
  • Transistor-Polarity N-Channel
  • Forward-Transconductance-Min 380 mS
  • Vgs-Gate-Source-Breakdown-Voltage 3 V

CLF1G0060S-10U

CLF1G0060S-10U Specifications

CLF1G0060S-10U FAQ
  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Operating-Temperature-Range of the product?

    Q: The Operating-Temperature-Range of the product is - 65 C to + 150 C.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed SOT1227B

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed GaN Si

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is HEMT.

  • A: Is the cutoff frequency of the product Gain?

    Q: Yes, the product's Gain is indeed 14.5 dB

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 3.5 GHz

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 1.7 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 150 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 2 V.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 380 mS.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Breakdown-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Breakdown-Voltage is indeed 3 V

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US$10 663.65
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