CSD22202W15

Mfr. #: CSD22202W15
제조사: Texas Instruments
설명: MOSFET P-CH 8V 10A 9DSBGA
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: CSD22202W15 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD22202W15 Overview

Product belongs to the CSD22202W15 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. DSBGA-9 Si is the technology used. Number of channels: 1 Channel Configuration Single Channel Transistor type: 1 P-Channel Power-off control: 1.5 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 38 ns of 16 ns. This product has a 8.4 ns of 16 ns. This product's - 6 V. The ID of continuous drain current is - 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 8 V. This product has a - 800 mV Vgs-th gate-source threshold voltage for efficient power management. The 12.2 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 109 ns This product has a 10.4 ns. Qg-Gate-Charge is 6.5 nC. This product operates in Enhancement channel mode for optimal performance.

CSD22202W15 Image

CSD22202W15

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD22202W15 Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD22202W15
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case DSBGA-9
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single Channel
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 1.5 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 38 ns
  • Rise-Time 8.4 ns
  • Vgs-Gate-Source-Voltage - 6 V
  • Id-Continuous-Drain-Current - 5 A
  • Vds-Drain-Source-Breakdown-Voltage - 8 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 800 mV
  • Rds-On-Drain-Source-Resistance 12.2 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 109 ns
  • Typical-Turn-On-Delay-Time 10.4 ns
  • Qg-Gate-Charge 6.5 nC
  • Channel-Mode Enhancement

CSD22202W15

CSD22202W15 Specifications

CSD22202W15 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD22202W15.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is DSBGA-9.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single Channel.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 P-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 1.5 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 38 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 8.4 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is - 6 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is - 5 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is - 8 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 800 mV.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 12.2 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is P-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 109 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 10.4 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 6.5 nC

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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