CSD25211W1015

Mfr. #: CSD25211W1015
제조사: Texas Instruments
설명: MOSFET P-CH 20V 3.2A 6DSBGA
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: CSD25211W1015 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25211W1015 Overview

Product belongs to the CSD25211W1015 series. Reel is the packaging method for this product Weight of 0.000060 oz SMD/SMT Mounting-Style Trade name: NexFET. DSBGA-6 Si is the technology used. Number of channels: 1 Channel Configuration Single Channel Transistor type: 1 P-Channel Power-off control: 1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 14.2 ns of 16 ns. This product has a 8.8 ns of 16 ns. This product's - 6 V. The ID of continuous drain current is - 3.2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 800 mV Vgs-th gate-source threshold voltage for efficient power management. The 33 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 36.9 ns This product has a 13.6 ns. Qg-Gate-Charge is 3.4 nC. This product features a 12 S of 500 S for high performance.

CSD25211W1015 Image

CSD25211W1015

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25211W1015 Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD25211W1015
  • Packaging Reel
  • Unit-Weight 0.000060 oz
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case DSBGA-6
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single Channel
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 1 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 14.2 ns
  • Rise-Time 8.8 ns
  • Vgs-Gate-Source-Voltage - 6 V
  • Id-Continuous-Drain-Current - 3.2 A
  • Vds-Drain-Source-Breakdown-Voltage - 20 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 800 mV
  • Rds-On-Drain-Source-Resistance 33 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 36.9 ns
  • Typical-Turn-On-Delay-Time 13.6 ns
  • Qg-Gate-Charge 3.4 nC
  • Forward-Transconductance-Min 12 S

CSD25211W1015

CSD25211W1015 Specifications

CSD25211W1015 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD25211W1015.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.000060 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is DSBGA-6.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single Channel.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 P-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 1 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 14.2 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 8.8 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed - 6 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is - 3.2 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed - 20 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is - 800 mV.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 33 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is P-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 36.9 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 13.6 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 3.4 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 12 S

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