CSD87333Q3D

CSD87333Q3D Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: 125°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-VSON (3.3x3.3) This product uses an 2 N-Channel (Dual) Asymmetrical FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 662pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate, 5V Drive. 15A continuous drain-ID current at 25°C; This product has an 14.3 mOhm @ 4A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2.2 ns of 16 ns. This product has a 3.9 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 15 A 15 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 1.2 V Vgs-th gate-source threshold voltage for efficient power management. The 13.4 mOhms 13.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 4.6 nC. This product features a 43 S of 500 S for high performance.

CSD87333Q3D Image

CSD87333Q3D Specifications

• Manufacturer LSSJ 品牌
• Product Category FETs - Arrays
• Series NexFET
• Packaging Digi-ReelR Alternate Packaging
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case 8-PowerTDFN
• Technology Si
• Operating-Temperature 125°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 2 Channel
• Supplier-Device-Package 8-VSON (3.3x3.3)
• FET-Type 2 N-Channel (Dual) Asymmetrical
• Power-Max 6W
• Transistor-Type 2 N-Channel
• Drain-to-Source-Voltage-Vdss 30V
• Input-Capacitance-Ciss-Vds 662pF @ 15V
• FET-Feature Logic Level Gate, 5V Drive
• Current-Continuous-Drain-Id-25°C 15A
• Rds-On-Max-Id-Vgs 14.3 mOhm @ 4A, 8V
• Vgs-th-Max-Id 1.2V @ 250μA
• Gate-Charge-Qg-Vgs 4.6nC @ 4.5V
• Pd-Power-Dissipation 6 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 2.2 ns
• Rise-Time 3.9 ns
• Vgs-Gate-Source-Voltage 10 V
• Id-Continuous-Drain-Current 15 A 15 A
• Vds-Drain-Source-Breakdown-Voltage 30 V 30 V
• Vgs-th-Gate-Source-Threshold-Voltage 1.2 V
• Rds-On-Drain-Source-Resistance 13.4 mOhms 13.4 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 4.6 nC
• Forward-Transconductance-Min 43 S

CSD87333Q3D FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed NexFET

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: What is the Tradename of the product?

  Q: The Tradename of the product is NexFET.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is 8-PowerTDFN.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed 125°C (TJ)

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Surface Mount

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 2 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is 8-VSON (3.3x3.3).

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed 2 N-Channel (Dual) Asymmetrical

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 2 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 662pF @ 15V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Logic Level Gate, 5V Drive

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 15A.

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 14.3 mOhm @ 4A, 8V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 6 W

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 2.2 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 3.9 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 10 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 15 A 15 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 30 V 30 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.2 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 13.4 mOhms 13.4 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 4.6 nC

• A: At what frequency does the Forward-Transconductance-Min?

  Q: The product Forward-Transconductance-Min is 43 S.