CSD87335Q3DT

Mfr. #: CSD87335Q3DT
제조사: Texas Instruments
설명: MOSFET 2N-CH 30V 25A
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: CSD87335Q3DT 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD87335Q3DT Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerLDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-LSON (3.3x3.3) Configuration 2 N-Channel This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 1050pF @ 15V value of 300pF @ 25V. This product's Standard. 25A continuous drain-ID current at 25°C; This product has an - of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4 ns 5 ns of 16 ns. This product has a 29 ns 27 ns of 16 ns. This product's 10 V 10 V. The ID of continuous drain current is 25 A 25 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 1 V 750 mV Vgs-th gate-source threshold voltage for efficient power management. The 2.4 Ohms 1.2 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns 17 ns This product has a 8 ns 8 ns. Qg-Gate-Charge is 5.7 nC 10.7 nC. This product features a 59 S 107 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD87335Q3DT Image

CSD87335Q3DT

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD87335Q3DT Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Arrays
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 8-PowerLDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 2 Channel
  • Supplier-Device-Package 8-LSON (3.3x3.3)
  • Configuration 2 N-Channel
  • FET-Type 2 N-Channel (Dual)
  • Power-Max 6W
  • Transistor-Type 2 N-Channel
  • Drain-to-Source-Voltage-Vdss 30V
  • Input-Capacitance-Ciss-Vds 1050pF @ 15V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 25A
  • Rds-On-Max-Id-Vgs -
  • Vgs-th-Max-Id 1.9V @ 250μA
  • Gate-Charge-Qg-Vgs 7.4nC @ 4.5V
  • Pd-Power-Dissipation 6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 4 ns 5 ns
  • Rise-Time 29 ns 27 ns
  • Vgs-Gate-Source-Voltage 10 V 10 V
  • Id-Continuous-Drain-Current 25 A 25 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1 V 750 mV
  • Rds-On-Drain-Source-Resistance 2.4 Ohms 1.2 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 13 ns 17 ns
  • Typical-Turn-On-Delay-Time 8 ns 8 ns
  • Qg-Gate-Charge 5.7 nC 10.7 nC
  • Forward-Transconductance-Min 59 S 107 S
  • Channel-Mode Enhancement

CSD87335Q3DT

CSD87335Q3DT Specifications

CSD87335Q3DT FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed 8-PowerLDFN

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 2 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed 8-LSON (3.3x3.3)

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed 2 N-Channel

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is 2 N-Channel (Dual).

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 2 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 1050pF @ 15V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 25A.

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is -.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 6 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 4 ns 5 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 29 ns 27 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 10 V 10 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 25 A 25 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V 30 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1 V 750 mV.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.4 Ohms 1.2 Ohms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 13 ns 17 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 8 ns 8 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 5.7 nC 10.7 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 59 S 107 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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