IRF830

IRF830 Overview

Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 74 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 16 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 4.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 1.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 42 ns This product has a 8.2 ns. This product operates in Enhancement channel mode for optimal performance.

IRF830 Image

IRF830 Specifications

• Manufacturer IR
• Product Category FETs - Single
• Packaging Tube
• Unit-Weight 0.211644 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 74 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 16 ns
• Rise-Time 16 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 4.5 A
• Vds-Drain-Source-Breakdown-Voltage 500 V
• Rds-On-Drain-Source-Resistance 1.5 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 42 ns
• Typical-Turn-On-Delay-Time 8.2 ns
• Channel-Mode Enhancement

IRF830 FAQ

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.211644 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-220-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 74 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 16 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 16 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 4.5 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 500 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 1.5 Ohms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 42 ns

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 8.2 ns.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement