LET20045C

Mfr. #: LET20045C
제조사: STMicroelectronics
설명: RF MOSFET Transistors RF PWR trans Ldmost 2.0 GHz N-Ch ENH
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: LET20045C 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
LET20045C Overview

Product belongs to the LET20045 series. Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style M243 Si is the technology used. The device offers a 12.5 dB of 26dB. Power-off control: 130 W Maximum operating temperature of + 150 C The operating frequency is 2 GHz. This product's 15 V. The ID of continuous drain current is 12 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. The transistor polarity is N-Channel.

LET20045C Image

LET20045C

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

LET20045C Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series LET20045
  • Type RF Power MOSFET
  • Packaging Bulk
  • Mounting-Style SMD/SMT
  • Package-Case M243
  • Technology Si
  • Gain 12.5 dB
  • Output-Power 65 W
  • Pd-Power-Dissipation 130 W
  • Maximum-Operating-Temperature + 150 C
  • Operating-Frequency 2 GHz
  • Vgs-Gate-Source-Voltage 15 V
  • Id-Continuous-Drain-Current 12 A
  • Vds-Drain-Source-Breakdown-Voltage 80 V
  • Transistor-Polarity N-Channel

LET20045C

LET20045C Specifications

LET20045C FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed LET20045

  • A: Is the cutoff frequency of the product Type?

    Q: Yes, the product's Type is indeed RF Power MOSFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Bulk.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is M243.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Gain of the product?

    Q: The Gain of the product is 12.5 dB.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 130 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 2 GHz

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 15 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 12 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 80 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

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US$119.49
US$119.49
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US$1 135.16
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US$10 754.10
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