MAT01GHZ

Mfr. #: MAT01GHZ
제조사: Analog Devices Inc.
설명: Bipolar Transistors - BJT MATCHED MONO DUAL NPN
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: MAT01GHZ 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MAT01GHZ Overview

Product belongs to the MAT01 series. Tube is the packaging method for this product Through Hole Mounting-Style TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 NPN (Dual) Matched Pair Maximum current collector Ic is 25mA . Maximum collector-emitter breakdown voltage of 45V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 800mV @ 1mA, 10mA Power-off control: 500 mW Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C Rated VCEO up to 45 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.12 V The 45 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 25 mA Gain-Bandwidth-Product: 450 MHz This product is capable of handling a 25 mA continuous collector current. Minimum hfe for DC collector-base gain is 250. 610 of 605.

MAT01GHZ Image

MAT01GHZ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MAT01GHZ Specifications
  • Manufacturer Analog Devices Inc.
  • Product Category Transistors (BJT) - Arrays
  • Series MAT01
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-78-6 Metal Can
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-78-6
  • Configuration Dual
  • Power-Max 500mW
  • Transistor-Type 2 NPN (Dual) Matched Pair
  • Current-Collector-Ic-Max 25mA
  • Voltage-Collector-Emitter-Breakdown-Max 45V
  • DC-Current-Gain-hFE-Min-Ic-Vce -
  • Vce-Saturation-Max-Ib-Ic 800mV @ 1mA, 10mA
  • Current-Collector-Cutoff-Max 400nA
  • Frequency-Transition 450MHz
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 125 C
  • Minimum-Operating-Temperature - 55 C
  • Collector-Emitter-Voltage-VCEO-Max 45 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.12 V
  • Collector-Base-Voltage-VCBO 45 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 25 mA
  • Gain-Bandwidth-Product-fT 450 MHz
  • Continuous-Collector-Current 25 mA
  • DC-Collector-Base-Gain-hfe-Min 250
  • DC-Current-Gain-hFE-Max 610

MAT01GHZ

MAT01GHZ Specifications

MAT01GHZ FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MAT01.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-78-6 Metal Can

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-78-6.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 2 NPN (Dual) Matched Pair

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 25mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 45V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is -.

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 800mV @ 1mA, 10mA.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 500 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 125 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is 45 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 0.12 V.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 45 V

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 25 mA

  • A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?

    Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 450 MHz

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 25 mA

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 250.

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 610.

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