| Mfr. #: | MAT03EHZ |
|---|---|
| 제조사: | Analog Devices Inc. |
| 설명: | Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | MAT03EHZ 데이터 시트 |
Product belongs to the MAT03 series. Tube is the packaging method for this product TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 PNP (Dual) Maximum current collector Ic is 20mA . Maximum collector-emitter breakdown voltage of 36V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 100mV @ 100μA, 1mA Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C Rated VCEO up to 36 V The transistor polarity is PNP. Saturation voltage between collector and emitter is 100 mV The 36 V voltage rating is 40 V. Max DC collector current: 20 mA Gain-Bandwidth-Product: 190 MHz Minimum hfe for DC collector-base gain is 80 at 10 uA 36 V.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MAT03EHZ Specifications
A: What is the Series of the product?
Q: The Series of the product is MAT03.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-78-6 Metal Can.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-78-6.
A: What is the Configuration of the product?
Q: The Configuration of the product is Dual.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 2 PNP (Dual).
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 20mA.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 36V
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is -.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 100mV @ 100μA, 1mA.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 125 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 36 V.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is PNP.
A: What is the Collector-Emitter-Saturation-Voltage of the product?
Q: The Collector-Emitter-Saturation-Voltage of the product is 100 mV.
A: What is the Collector-Base-Voltage-VCBO of the product?
Q: The Collector-Base-Voltage-VCBO of the product is 36 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 20 mA.
A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?
Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 190 MHz
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 80 at 10 uA 36 V.