MAT03FHZ

Mfr. #: MAT03FHZ
제조사: Analog Devices Inc.
설명: Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: MAT03FHZ 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MAT03FHZ Overview

Product belongs to the MAT03 series. Tube is the packaging method for this product Through Hole Mounting-Style TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 PNP (Dual) Maximum current collector Ic is 20mA . Maximum collector-emitter breakdown voltage of 36V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 100mV @ 100μA, 1mA Power-off control: 500 mW Maximum operating temperature of + 85 C Minimum operating temperature: - 40 C Rated VCEO up to 36 V The transistor polarity is PNP. Saturation voltage between collector and emitter is 0.025 V The 36 V voltage rating is 40 V. 36 V rating of 5 V Max DC collector current: 20 mA Gain-Bandwidth-Product: 190 MHz This product is capable of handling a 20 mA continuous collector current. Minimum hfe for DC collector-base gain is 40. 120 of 605.

MAT03FHZ Image

MAT03FHZ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MAT03FHZ Specifications
  • Manufacturer Analog Devices Inc.
  • Product Category Transistors (BJT) - Arrays
  • Series MAT03
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-78-6 Metal Can
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-78-6
  • Configuration Dual
  • Power-Max 500mW
  • Transistor-Type 2 PNP (Dual)
  • Current-Collector-Ic-Max 20mA
  • Voltage-Collector-Emitter-Breakdown-Max 36V
  • DC-Current-Gain-hFE-Min-Ic-Vce -
  • Vce-Saturation-Max-Ib-Ic 100mV @ 100μA, 1mA
  • Current-Collector-Cutoff-Max -
  • Frequency-Transition 190MHz
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 85 C
  • Minimum-Operating-Temperature - 40 C
  • Collector-Emitter-Voltage-VCEO-Max 36 V
  • Transistor-Polarity PNP
  • Collector-Emitter-Saturation-Voltage 0.025 V
  • Collector-Base-Voltage-VCBO 36 V
  • Emitter-Base-Voltage-VEBO 36 V
  • Maximum-DC-Collector-Current 20 mA
  • Gain-Bandwidth-Product-fT 190 MHz
  • Continuous-Collector-Current 20 mA
  • DC-Collector-Base-Gain-hfe-Min 40
  • DC-Current-Gain-hFE-Max 120

MAT03FHZ

MAT03FHZ Specifications

MAT03FHZ FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MAT03

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-78-6 Metal Can

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-78-6.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 2 PNP (Dual)

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 20mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 36V.

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is -.

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 100mV @ 100μA, 1mA.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 85 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 40 C

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 36 V.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is PNP.

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 0.025 V.

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 36 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 36 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 20 mA

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 190 MHz.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 20 mA

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 40.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?

    Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 120

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