| Mfr. #: | PD57030S-E |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | RF MOSFET Transistors POWER R.F. |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | PD57030S-E 데이터 시트 |


Product belongs to the PD57030-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Straight Lead) Si is the technology used. The device offers a 14 dB at 945 MHz of 26dB. Power-off control: 52.8 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD57030S-E Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed PD57030-E
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed RF Power MOSFET
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Package-Case of the product?
Q: The Package-Case of the product is PowerSO-10RF (Straight Lead).
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Gain of the product?
Q: The Gain of the product is 14 dB at 945 MHz.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 52.8 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: What is the Operating-Frequency of the product?
Q: The Operating-Frequency of the product is 1 GHz.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 4 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 65 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel