PD85006-E

Mfr. #: PD85006-E
제조사: STMicroelectronics
설명: RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: PD85006-E 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PD85006-E Overview

Product belongs to the PD85006-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 15 dB at 870 MHz of 26dB. Power-off control: 36.5 W Maximum operating temperature of + 150 C The operating frequency is 1 GHz. This product's 15 V. The ID of continuous drain current is 2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. The transistor polarity is N-Channel.

PD85006-E Image

PD85006-E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD85006-E Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series PD85006-E
  • Type RF Power MOSFET
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Package-Case PowerSO-10RF (Formed Lead)
  • Technology Si
  • Gain 15 dB at 870 MHz
  • Output-Power 6 W
  • Pd-Power-Dissipation 36.5 W
  • Maximum-Operating-Temperature + 150 C
  • Operating-Frequency 1 GHz
  • Vgs-Gate-Source-Voltage 15 V
  • Id-Continuous-Drain-Current 2 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Transistor-Polarity N-Channel

PD85006-E

PD85006-E Specifications

PD85006-E FAQ
  • A: At what frequency does the Series?

    Q: The product Series is PD85006-E.

  • A: At what frequency does the Type?

    Q: The product Type is RF Power MOSFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is PowerSO-10RF (Formed Lead).

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Gain?

    Q: Yes, the product's Gain is indeed 15 dB at 870 MHz

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 36.5 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 1 GHz

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 15 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 40 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

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