SD56120M

SD56120M Overview

Product belongs to the SD56120 series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style M252 Si is the technology used. The device offers a 13 dB at 860 MHz of 26dB. Power-off control: 236 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 14 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel. This product features a 3 S of 500 S for high performance.

SD56120M Image

SD56120M Specifications

• Manufacturer ST
• Product Category Module
• Series SD56120
• Type RF Power MOSFET
• Packaging Tube
• Mounting-Style SMD/SMT
• Package-Case M252
• Technology Si
• Gain 13 dB at 860 MHz
• Output-Power 120 W
• Pd-Power-Dissipation 236 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Operating-Frequency 1 GHz
• Vgs-Gate-Source-Voltage +/- 20 V
• Id-Continuous-Drain-Current 14 A
• Vds-Drain-Source-Breakdown-Voltage 65 V
• Transistor-Polarity N-Channel
• Forward-Transconductance-Min 3 S

SD56120M FAQ

• A: At what frequency does the Series?

  Q: The product Series is SD56120.

• A: What is the Type of the product?

  Q: The Type of the product is RF Power MOSFET.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is M252.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Gain of the product?

  Q: The Gain of the product is 13 dB at 860 MHz.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 236 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

• A: Is the cutoff frequency of the product Operating-Frequency?

  Q: Yes, the product's Operating-Frequency is indeed 1 GHz

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 14 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 65 V

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Forward-Transconductance-Min?

  Q: The product Forward-Transconductance-Min is 3 S.