| Mfr. #: | STB21N65M5 |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | IGBT Transistors MOSFET POWER MOSFET N-CH 650V |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | STB21N65M5 데이터 시트 |
Product belongs to the MDmesh M5 series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Power-off control: 125 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 12 ns of 16 ns. This product has a 10 ns of 16 ns. The ID of continuous drain current is 17 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 190 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 50 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB21N65M5 Specifications
A: What is the Series of the product?
Q: The Series of the product is MDmesh M5.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.139332 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-252-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 125 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 12 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 10 ns
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 17 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 190 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 50 nC.