| Mfr. #: | STB35N60DM2 |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | MOSFET N-CH 600V 28A |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | STB35N60DM2 데이터 시트 |
Weight of 0.079014 oz SMD/SMT Mounting-Style D2PAK-3 Si is the technology used. Number of channels: 1 Channel Configuration 1 N-Channel Power-off control: 210 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 10.7 ns of 16 ns. This product has a 17 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 28 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 110 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 68 ns This product has a 21.2 ns. Qg-Gate-Charge is 54 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB35N60DM2 Specifications
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.079014 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is D2PAK-3.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Configuration?
Q: The product Configuration is 1 N-Channel.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 210 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 10.7 ns
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 17 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is +/- 25 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 28 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 110 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 68 ns
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 21.2 ns
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 54 nC.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.