| Mfr. #: | STB80NF55L-06T4 |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | RF Bipolar Transistors MOSFET N-Ch, 55V-0.005ohms 80A |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | STB80NF55L-06T4 데이터 시트 |
RoHS compliant with Details Input bias current of SMD/SMT Package type is TO-252-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 55 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 80 A; The Rds On - Drain-Source Resistance of the product is 6.5 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 16 V. Maximum Operating Temperature: + 175 C Si is the technology used. Reel is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 80 ns - 55 C minimum operating temperature The power dissipation is 300 W. 180 ns Rise Time Product belongs to the STB80NF55L series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 135 ns; The 32 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB80NF55L-06T4 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-252-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 55 V
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 80 A
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 6.5 mOhms.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is 16 V.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 80 ns.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 300 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 180 ns.
A: What is the Series of the product?
Q: The Series of the product is STB80NF55L.
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 135 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 32 ns.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.139332 oz.