| Mfr. #: | STD845DN40 |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | Bipolar Transistors - BJT Dual NPN High Volt Low Vce(sat) |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | STD845DN40 데이터 시트 |
Product belongs to the STD845DN40 series. Tube is the packaging method for this product Weight of 0.080001 oz Through Hole Mounting-Style 8-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 8-DIP Configuration Dual Transistor type: 2 NPN (Dual) Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 400V DC current gain minimum (hFE) of Ic/Vce at 12 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 1A, 4A Power-off control: 45 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 400 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 500 mV The 700 V voltage rating is 40 V. 9 V to 18 V rating of 5 V Max DC collector current: 8 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 10.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STD845DN40 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed STD845DN40
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.080001 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed 8-DIP (0.300", 7.62mm)
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 8-DIP.
A: At what frequency does the Configuration?
Q: The product Configuration is Dual.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 2 NPN (Dual).
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 4A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 400V
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 12 @ 2A, 5V.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 500mV @ 1A, 4A.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 45 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 400 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?
Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 500 mV
A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?
Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 700 V
A: At what frequency does the Emitter-Base-Voltage-VEBO?
Q: The product Emitter-Base-Voltage-VEBO is 9 V to 18 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 8 A.
A: What is the Continuous-Collector-Current of the product?
Q: The Continuous-Collector-Current of the product is 4 A.
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 10.