| Mfr. #: | STF10LN80K5 |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | MOSFET N-CH 800V 8A TO-220FP |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | STF10LN80K5 데이터 시트 |


RoHS compliant with Details Input bias current of Through Hole Package type is IPAK-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 800 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 5 A; The Rds On - Drain-Source Resistance of the product is 1.15 Ohms. The Vgs - Gate-Source Voltage attribute for this product is +/- 30 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 12 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 17.4 ns - 55 C minimum operating temperature The power dissipation is 85 W. 6.7 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 23.6 ns; The 9.3 ns typical turn-on delay time

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF10LN80K5 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: At what frequency does the Package / Case?
Q: The product Package / Case is IPAK-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 800 V.
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 5 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 1.15 Ohms
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is +/- 30 V.
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 3 V.
A: At what frequency does the Qg - Gate Charge?
Q: The product Qg - Gate Charge is 12 nC.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed 1 N-Channel
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 17.4 ns
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 85 W
A: At what frequency does the Rise Time?
Q: The product Rise Time is 6.7 ns.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 23.6 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 9.3 ns.