| Mfr. #: | STF12N120K5 |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | MOSFET N-CH 1200V 12A TO-220FP |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | STF12N120K5 데이터 시트 |


RoHS compliant with Details Input bias current of SMD/SMT Package type is TO-252-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 80 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 80 A; The Rds On - Drain-Source Resistance of the product is 6.5 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 20 V. The 2.5 V to 4.5 V Gate-Source Threshold Voltage of Vgs th; 150 nC Gate Charge of Qg; Maximum Operating Temperature: + 175 C Si is the technology used. Enhancement Channel Mode Fall Time of 48 ns - 55 C minimum operating temperature The power dissipation is 167 W. 61 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 162 ns; The 24 ns typical turn-on delay time The Unit Weight is 0.139332 oz.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF12N120K5 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is SMD/SMT.
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-252-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 80 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 80 A
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 6.5 mOhms.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is +/- 20 V.
A: What is the Vgs th - Gate-Source Threshold Voltage of the product?
Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2.5 V to 4.5 V.
A: What is the Qg - Gate Charge of the product?
Q: The Qg - Gate Charge of the product is 150 nC.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 175 C.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 48 ns
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 167 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 61 ns.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 162 ns
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 24 ns
A: At what frequency does the Unit Weight?
Q: The product Unit Weight is 0.139332 oz.