| Mfr. #: | STFI9N80K5 |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | MOSFET N-CH 800V 7A I2PAKFP |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | STFI9N80K5 데이터 시트 |
RoHS compliant with Details Input bias current of Through Hole Package type is I2PAKFP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 800 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 7 A; The Rds On - Drain-Source Resistance of the product is 900 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 30 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 12 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 13.6 ns - 55 C minimum operating temperature The power dissipation is 25 W. 5.7 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 65.3 ns; The 11 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STFI9N80K5 Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is I2PAKFP-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 800 V
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 7 A.
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 900 mOhms.
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is +/- 30 V.
A: What is the Vgs th - Gate-Source Threshold Voltage of the product?
Q: The Vgs th - Gate-Source Threshold Voltage of the product is 3 V.
A: At what frequency does the Qg - Gate Charge?
Q: The product Qg - Gate Charge is 12 nC.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: At what frequency does the Configuration?
Q: The product Configuration is 1 N-Channel.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 13.6 ns.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 25 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 5.7 ns.
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 65.3 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 11 ns.