STN851

Mfr. #: STN851
제조사: STMicroelectronics
설명: Bipolar Transistors - BJT NPN Lo-Volt Fast Sw
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데이터 시트: STN851 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STN851 Overview

Product belongs to the 500V Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.006632 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Surface Mount mounting type Supplier device package: SOT-223 Configuration Single Transistor type: NPN Maximum current collector Ic is 5A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 150 @ 2A, 1V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 200mA, 5A Power-off control: 1.6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 320 mV The 150 V voltage rating is 40 V. 7 V rating of 5 V Max DC collector current: 5 A Gain-Bandwidth-Product: 130 MHz Minimum hfe for DC collector-base gain is 150. 350 of 605.

STN851 Image

STN851

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STN851 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.006632 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-223
  • Configuration Single
  • Power-Max 1.6W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 5A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 150 @ 2A, 1V
  • Vce-Saturation-Max-Ib-Ic 500mV @ 200mA, 5A
  • Current-Collector-Cutoff-Max 50nA (ICBO)
  • Frequency-Transition 130MHz
  • Pd-Power-Dissipation 1.6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 320 mV
  • Collector-Base-Voltage-VCBO 150 V
  • Emitter-Base-Voltage-VEBO 7 V
  • Maximum-DC-Collector-Current 5 A
  • Gain-Bandwidth-Product-fT 130 MHz
  • DC-Collector-Base-Gain-hfe-Min 150
  • DC-Current-Gain-hFE-Max 350

STN851

STN851 Specifications

STN851 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 500V Transistors.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.006632 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-261-4, TO-261AA

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed SOT-223

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 5A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 60V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 150 @ 2A, 1V.

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 500mV @ 200mA, 5A

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 1.6 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 60 V

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Collector-Emitter-Saturation-Voltage of the product?

    Q: The Collector-Emitter-Saturation-Voltage of the product is 320 mV.

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 150 V.

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 7 V.

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 5 A.

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 130 MHz.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 150

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 350.

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