STP120NF10

Mfr. #: STP120NF10
제조사: STMicroelectronics
설명: MOSFET N-CH 100V 110A TO-220
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: STP120NF10 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP120NF10 Overview

Product belongs to the STripFET II series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 100V This product has an 5200pF @ 25V value of 300pF @ 25V. This product's Standard. 110A (Tc) continuous drain-ID current at 25°C; This product has an 10.5 mOhm @ 60A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 312 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 68 ns of 16 ns. This product has a 90 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. The 10.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 132 ns This product has a 25 ns. This product features a 90 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP120NF10 Image

STP120NF10

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP120NF10 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series STripFET II
  • Packaging Tube
  • Unit-Weight 0.050717 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature -55°C ~ 175°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 312W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 100V
  • Input-Capacitance-Ciss-Vds 5200pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 110A (Tc)
  • Rds-On-Max-Id-Vgs 10.5 mOhm @ 60A, 10V
  • Vgs-th-Max-Id 4V @ 250μA
  • Gate-Charge-Qg-Vgs 233nC @ 10V
  • Pd-Power-Dissipation 312 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 68 ns
  • Rise-Time 90 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 120 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Rds-On-Drain-Source-Resistance 10.5 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 132 ns
  • Typical-Turn-On-Delay-Time 25 ns
  • Forward-Transconductance-Min 90 S
  • Channel-Mode Enhancement

STP120NF10

STP120NF10 Specifications

STP120NF10 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is STripFET II.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.050717 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 175°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-220AB.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 100V

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 5200pF @ 25V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 110A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 10.5 mOhm @ 60A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 312 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 68 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 90 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 120 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 10.5 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 132 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 25 ns.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 90 S.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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1
US$1.20
US$1.20
10
US$1.14
US$11.37
100
US$1.08
US$107.70
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US$1.02
US$508.60
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