STP60NF06L

STP60NF06L Overview

Product belongs to the STripFET II series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -65°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 60V This product has an 2000pF @ 25V value of 300pF @ 25V. This product's Standard. 60A (Tc) continuous drain-ID current at 25°C; This product has an 14 mOhm @ 30A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 110 W Maximum operating temperature of + 175 C Minimum operating temperature: - 65 C This product has a 30 ns of 16 ns. This product has a 220 ns of 16 ns. This product's 15 V. The ID of continuous drain current is 60 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. The 14 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 55 ns This product has a 35 ns. This product features a 20 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP60NF06L Image

STP60NF06L Specifications

• Manufacturer
• Product Category FETs - Single
• Series STripFET II
• Packaging Tube
• Unit-Weight 0.050717 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -65°C ~ 175°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220AB
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 110W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 60V
• Input-Capacitance-Ciss-Vds 2000pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 60A (Tc)
• Rds-On-Max-Id-Vgs 14 mOhm @ 30A, 10V
• Vgs-th-Max-Id 1V @ 250μA
• Gate-Charge-Qg-Vgs 66nC @ 4.5V
• Pd-Power-Dissipation 110 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 65 C
• Fall-Time 30 ns
• Rise-Time 220 ns
• Vgs-Gate-Source-Voltage 15 V
• Id-Continuous-Drain-Current 60 A
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Rds-On-Drain-Source-Resistance 14 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 55 ns
• Typical-Turn-On-Delay-Time 35 ns
• Forward-Transconductance-Min 20 S
• Channel-Mode Enhancement

STP60NF06L FAQ

• A: What is the Series of the product?

  Q: The Series of the product is STripFET II.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.050717 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -65°C ~ 175°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-220AB.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 60V.

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 2000pF @ 25V

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 60A (Tc)

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 14 mOhm @ 30A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 110 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 65 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 30 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 220 ns

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 15 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 60 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 60 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 14 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 55 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 35 ns.

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 20 S

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement